SF20A300HPI
Absolute Maximum Ratings (Limiting Values)
Characteristic
Symbol
Value
Unit
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VR
300
V
per diode
total device
10
20
Maximum average forward rectified current
IF(AV)
A
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
IFSM
120
Storage temperature range
Tstg
Tj
-45℃ to +150℃
℃
℃
Maximum operating junction temperature
150
Thermal Characteristics
Characteristic
Symbol
Value
4.0
Unit
per diode
total device
Maximum thermal resistance junction to case
Rth(j-c)
℃/W
3.6
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Tj=25℃
Tj=125℃
Tj=25℃
Tj=125℃
-
-
-
-
-
-
-
-
1.30
0.95
20
V
V
(1)
Peak forward voltage drop
VFM
IFM = 10A
VR = VRRM
uA
uA
(1)
Reverse leakage current
IRM
500
Reverse recovery time
Junction capacitance
trr
IF = 1A, di/dt =-100 A/us
VR = 10VDC, f=1MHz
-
-
-
30
-
ns
Cj
65
pF
Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2%
KSD-D0O009-001
2
KODENSHI [ KODENSHI KOREA CORP. ]
