SMK0460I
Advanced Power N-Ch MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
•
•
•
High Voltage: BV
DSS
=600V(Min.)
Low C
rss
: C
rss
=9.8pF(Typ.)
Low gate charge : Qg=12nC(Typ.)
Low R
DS(on)
:R
DS(on)
=2.5Ω(Max.)
Type No.
SMK0460I
Marking
SMK0460
Package Code
I-PAK
GD S
S
I-PAK
PIN Connection
D
G
Ordering Information
Marking Diagram
SMK0460I
YWW
Column 1 2 : Device Code
Column 3: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings
(T
C
=25°C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed)
*
Symbol
V
DSS
V
GSS
I
D
(Tc=25℃)
(Tc=100℃)
I
DM
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
600
±30
4
2.53
16
48
4
225
4
10
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Drain Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-a)
Typ.
-
-
Max
2.6
62.5
Unit
℃/W
KSD-T6Q006-001
1
KODENSHI [ KODENSHI KOREA CORP. ]
