SMK0460D
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
th(j-c)
R
th(j-a)
Rating
Max. 2.6
Max. 62.5
Unit
C/W
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Internal gate resistance
Forward transfer conductance
(Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
(Note 3,4)
Rise time
(Note 3,4)
Turn-off delay time
Fall time
(Note 3,4)
Total gate charge
(Note 3,4)
Gate-source charge
(Note 3,4)
Gate-drain charge
(Note 3,4)
(Note 3,4)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
R
G
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=600V, V
GS
=0V
V
DS
=0V, V
GS
=30V
V
GS
=10V, I
D
=2A
f=1MHz, V
DS
=0V
V
DS
=10V, I
D
=2A
V
DS
=25V, V
GS
=0V,
f=1MHz
Min.
600
2.0
-
-
-
-
-
-
-
-
12
Typ.
-
-
-
-
2.1
1.25
4.0
670
57
9.8
25
28
110
36
12
4
3
Max.
-
4.0
1
100
2.5
6.25
-
848
71
12.2
38
42
165
54
15
-
-
Unit
V
V
uA
nA
S
pF
V
DD
=300V, I
D
=4A
R
G
=25Ω
14
55
18
-
ns
V
DS
=480V, V
GS
=10V
I
D
=4A
-
-
nC
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3,4)
Reverse recovery charge
(Note 3,4)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=4A
I
S
=4A, V
GS
=0V
dI
S
/dt=-100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
300
2.2
Max.
4
16
1.4
-
-
Unit
A
A
V
ns
uC
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=25.9mH, I
AS
=4A, V
DD
=50V, R
G
=25, Starting T
J
=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 11-AUG-11
KSD-T6O015-002
www.auk.co.kr
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KODENSHI [ KODENSHI KOREA CORP. ]
