SMK1820D2
Advanced N-Ch Power MOSFET
HIGH VOLTAGE SWITCHING APPLICATIONS
Features
High Voltage : BV
DSS
=200V(Min.)
Low C
rss
: C
rss
=55pF(Typ.)
Low gate charge : Qg=22nC(Typ.)
Low R
DS(on)
: R
DS(on)
=0.17Ω(Max.)
PIN Connection
D
D
Ordering Information
Type No.
SMK1820D2
Marking
SMK1820
Package Code
D2-PAK
G
S
G
D2-PAK
S
Marking Diagram
Column 1 : Manufacturer
AUK
GYMDD
SMK1820
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
Absolute maximum ratings
(
T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
②
②
①
①
*
Symbol
V
DSS
V
GSS
I
D
T
C
=25C
T
C
=100C
I
DM
P
D
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
200
30
18
11.4
72
100
18
453
18
13.9
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max.
1.25
62.5
Unit
C/W
KSD-T6S007-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
