SMK730P
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BV
DSS
=400V(Min.)
Low C
rss
: C
rss
=14pF(Typ.)
Low gate charge : Qg=16nC(Typ.)
Low R
DS(on)
: R
DS(on)
=1.0Ω(Max.)
G
Package Code
TO-220AB
GD
S
TO-220AB
PIN Connection
D
Ordering Information
Type No.
SMK730P
Marking
SMK730
S
Marking Diagram
Column 1 : Manufacturer
AUK
GYMDD
SMK730
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute maximum ratings
(
T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Symbol
V
DSS
V
GSS
I
D
Tc=25C
Tc=100C
I
DM
P
D
②
②
①
①
Rating
400
30
5.5
3.48
22
70
5.5
449
5.5
8.5
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Drain current (Pulsed)
Power dissipation
*
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max.
1.78
62.5
Unit
C/W
KSD-T0P027-002
1