SRA2211E
PNP Silicon Transistor
Descriptions
•
Switching application
•
Interface circuit and driver circuit application
PIN Connection
OUT
Features
•
With built-in bias resistor
•
Simplify circuit design
•
Reduce a quantity of parts and
manufacturing process
•
High packing density
OUT
IN
COMMON
IN
R
1
R
1
= 10KΩ
Ordering Information
Type NO
SRA2211E
Marking
DR
□
①
②
①Device
Code
②
Year&Week Code
Package Code
SOT-523
Absolute Maximum Ratings
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
(Ta=25°C)
Symbol
V
O
V
I
I
O
P
D
T
J
T
stg
Rating
-50
-30, 5
-100
150
150
-55 ~ 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Output cut-off current
DC current gain
Output voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Input current
Input resistor (Input to base)
(Ta=25°C)
Symbol
I
O(OFF)
G
I
V
O(ON)
V
I(ON)
V
I(OFF)
f
T
*
I
I
R
1
Test Condition
V
O
=-50V, V
I
=0
V
O
=-5V, I
O
=-10mA
I
O
=-10mA, I
I
=-0.5mA
V
O
=-0.2V, I
O
=-5mA
V
O
=-5V, I
O
=-0.1mA
V
O
=-10V, I
O
=-5mA, f=1MHz
V
I
=-5V, I
O
=0
-
Min. Typ. Max.
-
120
-
-
-0.3
-
-
7
-
-
-0.1
-0.9
-0.55
200
-
10
-500
-
-0.3
-1.4
-
-
-0.88
13
Unit
nA
-
V
V
V
MHz
mA
KΩ
* : Characteristic of transistor only
KSD-R5E039-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
