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SRA2203E 参数 Datasheet PDF下载

SRA2203E图片预览
型号: SRA2203E
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP Silicon Transistor]
分类和应用: 晶体小信号双极晶体管
文件页数/大小: 4 页 / 228 K
品牌: KODENSHI [ KODENSHI KOREA CORP. ]
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SRA2203E
PNP Silicon Transistor
Descriptions
Switching application
Interface circuit and driver circuit application
PIN Connection
OUT
OUT
IN
Features
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and
manufacturing process
High packing density
COMMON
IN
R
1
R
1
22KΩ
R
2
22KΩ
R
2
Ordering Information
Type NO.
SRA2203E
Marking
3R
① ②
①Device
Code
Year&Week Code
COMMON
Package Code
SOT-523
Absolute Maximum Ratings
Characteristic
Output voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature range
(Ta=25°C)
Symbol
V
O
V
I
I
O
P
D
T
J
T
stg
Rating
-50
-40, 10
-100
150
150
-55 ~ 150
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Output cut-off current
DC current gain
Output voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Input current
Input resistor (Input to base)
Input resistor (Base to common)
(Ta=25°C)
Symbol
I
O(OFF)
G
I
V
O(ON)
V
I(ON)
V
I(OFF)
f
T
*
I
I
R
1
R
2
Test Condition
V
O
=-50V, V
I
=0
V
O
=-5V, I
O
=-10mA
I
O
=-10mA, I
I
=-0.5mA
V
O
=-0.2V, I
O
=-5mA
V
O
=-5V, I
O
=-0.1mA
V
O
=-10V, I
O
=-5mA, f=1MHz
V
I
=-5V, I
O
=0
-
-
Min. Typ.
-
70
-
-
-1.0
-
-
15.4
15.4
-
120
-0.1
-2.1
-1.2
200
-
22
22
Max.
-500
-
-0.3
-3.0
-
-
-0.36
28.6
28.6
Unit
nA
-
V
V
V
MHz
mA
* : Characteristic of transistor only
KSD-R5E027-000
1