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STB1277L 参数 Datasheet PDF下载

STB1277L图片预览
型号: STB1277L
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP Silicon Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 192 K
品牌: KODENSHI [ KODENSHI KOREA CORP. ]
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STB1277L
PNP Silicon Transistor
Description
Audio power amplifier
High current application
PIN Connection
Features
High current : I
C
=-2A
Complementary pair with STD1862L
TO -92L
1: Emitter
2 :Collector
3: Base
Ordering Information
Type NO.
STB1277L
Marking
STB1277
Package Code
TO-92L
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-30
-30
-5
-2
1
150
-55~150
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE*
V
BE(on)
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-1mA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-500mA
V
CE
=-2V, I
C
=-500mA
I
C
=-2A, I
B
=-0.2A
V
CB
=-5V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-30
-30
-5
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
170
48
-
-
-
-100
-100
320
-1
-0.8
-
-
Unit
V
V
V
nA
nA
-
V
V
MHz
pF
*
: h
FE
rank / O : 100~200, Y : 160~320
KSD-T0D007-000
1