STC722D
NPN Silicon Transistor
Description
•
General purpose amplifier
•
Surface mount applications
PIN Connection
Features
•
P
C
(Collector dissipation)=15W
•
Low speed switching applications
•
Complementary pair with STA723D
Ordering Information
Type NO.
STC722D
Marking
STC722
TO-252
Package Code
TO-252
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector Power dissipation (Tc=25℃)
Junction temperature
Storage temperature
* : Single pulse, tp= 300
㎲
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Ratings
40
30
5
3
6
15
150
-55~150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
C
=50μA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=500mA
V
CE
=3V, I
C
=3A
V
CE
=2A, I
C
= 200mA
V
CE
=5V, I
C
=500mA,
f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
Min.
40
30
5
-
-
80
10
-
-
-
Typ. Max.
-
-
-
-
-
-
-
0.5
120
13
-
-
-
1
1
390
-
0.8
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
* : h
FE
rank / O : 80~218, Y : 120~270, G : 180~390
KSD-T6O019-001
1
KODENSHI [ KODENSHI KOREA CORP. ]
