STD123S
NPN Silicon Transistor
Features
•
•
•
•
•
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : R
ON
=0.6Ω(Max.) (I
B
=1mA)
PIN Connection
Ordering Information
Type No.
STD123S
Marking
123
□
①
②
Package Code
SOT-23
C
B
E
①Device
Code
②
Year&Week Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* : Package mounted on 99.5% alumina 10×8×0.1mm
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
Ratings
20
15
6.5
1
350
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
On resistance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
R
ON
Test Condition
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
f=1KHz, I
B
=1mA, V
IN
=0.3V
Min. Typ. Max.
20
15
6.5
-
-
150
-
-
-
-
-
-
-
-
-
-
0.1
260
5
0.6
-
-
-
0.1
0.1
-
0.3
-
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
Ω
KSD-T5C034-001
1
KODENSHI [ KODENSHI KOREA CORP. ]
