STD1664
NPN Silicon Transistor
Description
•
Medium power amplifier application
PIN Connection
Features
•
P
C
(Collector power dissipation)=1W
(Ceramic substate of 250
㎟×0.8t
used)
•
Low collector saturation voltage :
V
CE(sat)
=0.15V(Typ.)
•
Complementary pair with STB1132
SOT-89
Ordering Information
Type NO.
STD1664
A2: DEVICE CODE,
Marking
A2
□YWW
□
:
h
FE
rank
, YWW(Y
Package Code
SOT-89
: Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
Ratings
40
32
5
1
2
0.5
1
150
-55~150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
㎲
** : When mounted on ceramic substrate(250
㎟×0.8t)
P
C
P
C
*
T
J
T
stg
KSD-T5B009-001
1
KODENSHI [ KODENSHI KOREA CORP. ]
