STJ001SF
Advanced P-Ch Trench MOSFET
PORTABLE EQUIPMENT APPLICATION
Features
Low Voltage : BV
DSS
=-20V(Min.)
Low V
GS(th)
: V
GS(th)
=-0.6~-1.4V
Small footprint due to small package
Low R
DS(on)
: R
DS(on)
=88mΩ(Max.)
G
Package Code
SOT-23F
S
SOT-23F
S
PIN Connection
D
D
G
Ordering Information
Type No.
STJ001SF
Marking
J01
□
① ②
Marking Diagram
J01 : Specific Device Code
J01
□
□
: Year & Week Code Marking
Absolute maximum ratings
(
T
A
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
Power dissipation
**
*
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
-20
12
-2.3
-9.2
0.35
-2.3
28
-2.3
1.3
150
-55~150
Unit
V
V
A
A
W
A
mJ
A
mJ
C
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
** Device mounted on a glass-epoxy board
Characteristic
Thermal
resistance
Junction-ambient
Symbol
R
th(J-A)
KSD-T5C037-003
Typ.
-
Max.
357
Unit
C/W
1
KODENSHI [ KODENSHI KOREA CORP. ]
