STK004SF
Advanced N-Ch Trench MOSFET
PORTABLE EQUIPMENT APPLICATION
Features
Low Voltage : BV
DSS
=20V(Min.)
Low V
GS(th)
: V
GS(th)
=0.6~1.2V
Small footprint due to small package
Low R
DS(on)
: R
DS(on)
=40mΩ(Max.)
G
Package Code
SOT-23F
S
SOT-23F
PIN Connection
D
Ordering Information
Type No.
STK004SF
Marking
K04
□
① ②
Marking Diagram
K04 : Specific Device Code
K04
□
□
: year & week Code Marking
Absolute maximum ratings
(
T
A
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
Power dissipation
**
*
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
20
12
4.2
16.8
0.35
4.2
27
4.2
2.5
150
-55~150
Unit
V
V
A
A
W
A
mJ
A
mJ
C
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
**
Device mounted on a glass-epoxy board
Characteristic
Thermal
resistance
Junction-ambient
Symbol
R
th(J-A)
KSD-T5C039-002
Typ.
-
Max.
357
Unit
C/W
1
KODENSHI [ KODENSHI KOREA CORP. ]
