SUM202MN
P-Channel MOSFET + PNP BJT
Integrated Power MOSFET
with PNP Low V
CE(sat)
Switching Transistor
DFN-8
This integrated device represents a new level of safety and
board−space reduction by combining the 20V P−Channel FET with a
PNP Silicon Low V
CE
(sat) switching transistor. This newly integrated
product provides higher efficiency and accuracy for battery powered
portable electronics.
BV
DSS
1
8
MOSFET
R
DS(ON)
Typ.
48mΩ
@ VGS=-4.5V
65mΩ
@ VGS=-2.5V
I
D
Max
Features
•
Low R
DS
(on) (MOSFET) and Low V
CE
(sat) (Transistor)
Logic Level Gate Drive (MOSFET)
Performance DFN Package
This is a Halogen−Free Device
•
Higher Efficiency Extending Battery Life
•
•
•
-20V
-5.3A
PNP BJT
BV
CEO
-12V
BV
EBO
.
-5V
I
C
Max
-5A
Applications
•
Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
Marking Diagram
1
Ordering Information
Device
SUM202MN
Marking
SUM202
Package
DFN8
SUM202
YMM
Column 1 : Device Code
Column 2 : Date Code (year, month)
Simple Schematic
1
2
3
4
8
7
6
5
KSD-T6T001-001
PIN Connection
Emitter
8
Collector
7
1
N/C
2
Collector
3
Source
Drain
4
Drain
Bottom View
1
Base
N/C
6
Gate
5
KODENSHI [ KODENSHI KOREA CORP. ]
