SUT462N
Epitaxial planar NPN/PNP silicon transistor
Descriptions
•
Complex type bipolar transistor
Features
•
Reduce quantity of parts and mounting cost
•
High collector power dissipation : P
C
=300mW(Max.)
•
Both 2SA1980 chip and 2SC5343 chip in SOT-26 Package
Package : SOT-26
Ordering Information
Type NO.
SUT462N
Marking
3X
□
□
: Year & Week Code
Package Code
SOT-26
Equivalent circuit & PIN Connections
•
Equivalent Circuit
4
5
6
PIN Connections
1.
2.
3.
4.
5.
Collector 1
Base 2
Emitter 2
Collector 2
Base 1
6.
Emitter 1
Tr1
Tr2
3
2
1
Absolute Maximum Ratings
[Tr1, Tr2]
Rating
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
(Ta=25°C)
Symbol
Tr1
V
CBO
V
CEO
V
EBO
I
C
P
C
※
T
J
T
stg
60
50
5
150
300
150
-55~150
Unit
Tr2
-50
-50
-5
-150
V
V
V
mA
mW
°C
°C
※:
Total rating(Each terminal mounted on a recommended solder land)
KSD-T5P002-001
1
KODENSHI [ KODENSHI KOREA CORP. ]
