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MC33111D 参数 Datasheet PDF下载

MC33111D图片预览
型号: MC33111D
PDF下载: 下载PDF文件 查看货源
内容描述: 低压压扩硅单片集成电路 [Low Voltage Compander Silicon Monolithic Integrated Circuit]
分类和应用:
文件页数/大小: 12 页 / 1080 K
品牌: LANSDALE [ LANSDALE SEMICONDUCTOR INC. ]
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ML33111
RECOMMENDED OPERATING CONDITIONS
Characteristic
VCC Supply Voltage
Input Signal Voltage Range (3.0 V < VCC < 7.0 V)
Compressor — Normal and Mute Mode
— Passthrough Mode
Expander
— Normal Mode
— Mute Mode
— Passthrough Mode
Frequency Range (± 1.0 dB accuracy)
Logic Input Voltage Range (Pins 4, 8, 12)
Operating Ambient Temperature
NOTE:
All limits are not necessarily functional concurrently.
LANSDALE Semiconductor, Inc.
Symbol
VCC
Vin
Min
3.0
0
0
0
0
0
Typ
Max
7.0
1.3
0.8
0.32
1.3
1.0
10
VCC
+ 85
Unit
Vdc
Vrms
Fin
Vin
TA
0.300
0
– 40
kHz
Vdc
°C
ELECTRICAL CHARACTERISTICS
(VCC = 3.6 V, f = 1.0 kHz, TA = + 25°C, unless noted.)
Characteristic
COMPRESSOR
(Pin 4 = Low unless noted)
0 dB Gain (Vin = 100 mVrms)
Gain tracking relative to GOC
Vin = 1.0 Vrms
Vin = 1.0 mVrms
Passthrough Gain (Pin 8 = High, Pin 4 = Low, Vin = 1.0 Vrms)
Muting (∆ Gain) with Pin 4 = High (Vin = 1.0 Vrms)
Max. Output Swing @ Pin 2 (3.0 V < VCC < 7.0 V)
Normal Mode
Passthrough Mode
Peak Output Current (3.0
VCC
7.0 V, Normal or Passthrough Modes,
Vin = Max)
Total Harmonic Distortion (Vin = 100 mVrms)
Power Supply Rejection @ 1.0 KHz
Vin (Pin 3) = 0
Vin (Pin 3) = 10 mVrms
Vin (Pin 3) = 1.0 Vrms
Attack Time (Capacitor @ Pin 5 = 1.0
µF,
per EIA-553)
Decay Time (Capacitor @ Pin 5 = 1.0
µF,
per EIA-553)
Input Impedance at Pin 3
DC Bias Level (Pin 2)
Output DC Shift (Vin Changed from 0 to 100 mVrms)
EXPANDER
(Pin 12 = Low, unless noted)
0 dB Gain (Vin = 100 mVrms)
Gain Tracking Relative to GOE
Vin = 316 mVrms
Vin = 10 mVrms
Passthrough Gain (Pin 8 = High, Pin 12 = Low, Vin = 1.0 Vrms)
Muting (∆ Gain) with Pin 12 = High (Vin = 0.316 Vrms)
Max. Output Swing @ Pin 15 (3.0 V < VCC , 7.0 V)
Normal Mode
Passthrough Mode
Peak Output Current
VCC = 3.0 V, Vout
2.4 Vp-p
VCC = 3.0 V, Vout = 2.7 Vp-p
VCC
3.6 V, Vout
2.8 Vp-p
Total Harmonic Distortion (Vin = 100 mVrms)
GOE
GTE
19
– 41
GPTE
GMTE
Vout
IPK
THD
2.8
2.8
±
3.5
±1.0
±
4.0
0.2
mA
1.0
%
–1.0
60
20
– 40
0
76
21
– 39
2.0
dB
dB
Vp-p
–1.5
0
1.5
dB
dB
GOC
GTC
9.0
– 21
GPTC
GMTC
Vout
IPK
THD
PSRR
tAT(C)
tD(C)
Rin
VbIAS
8.0
1.4
– 20
37
64
72
3.0
14
10
Vb
1.6
14
1.6
2.0
ms
kΩ
Vdc
mVdc
1.1
2.3
±
4.0
0.2
1.0
mA
%
dB
– 2.0
55
10
– 20
0
67
11
–19
1.0
dB
dB
Vp-p
–1.5
0
1.5
dB
dB
Symbol
Min
Typ
Max
Unit
Page 3 of 12
www.lansdale.com
Issue A