ML13145
UHF Wideband Receiver Subsystem
(LNA, Mixer, VCO, Prescaler, IF
Subsystem, Coiless Detector)
LOW POWER
INTEGRATED RECEIVER
FOR
ISM BAND APPLICATIONS
SEMICONDUCTOR TECHNICAL DATA
Legacy Device:
Motorola MC13145
The ML13145 is a dual conversion integrated RF receiver intended for ISM
band applications. It features a Low Noise Amplifier (LNA), two 50
Ω
linear
Mixers with linearity control, Voltage Controlled Oscillator (VCO), second
LO amplifier, divide by 64/65 dual modulus Prescalar, split IF Amplifier and
Limiter, RSSI output, Coilless FM/FSK Demodulator and power down con-
trol. Together with the transmit chip (ML13146) and the baseband chip
(MC33410 or MC33411A/B), a complete 900 MHz cordless phone system
can be implemented. This device may be used in applications up to 1.8 GHz,
and operating temperature TA = –20° to +70°C.
48
1
LQFP 48 = -9P
PLASTIC PACKAGE
CASE 932
CROSS REFERENCE/ORDERING INFORMATION
• Low (<1.8 dB @ 900 MHz) Noise Figure LNA with 14 dB Gain
PACKAGE
MOTOROLA
LANSDALE
• Externally Programmable Mixer linearity: IIP3 = 10(nom.) to 17 dBm
LQFP 48
MC13145FTA
ML13145-9P
(Mixer1); IIP3 = 10 (nom.) to 17 dBm (Mixer2)
• 50
Ω
Mixer Input Impedance and Open Collector Output (Mixer 1 and
Note:
Lansdale lead free (Pb) product, as it
Mixer 2); 50
Ω
Second LO (LO2) Input Impedance
becomes available, will be identified by a part
• Low Power 64/65 Dual Modulus Prescalar (ML12054A type)
number prefix change from
ML
to
MLE.
• Split IF for Improved Filtering and Extended RSSI Range
• Internal 330
Ω
Terminations for 10.7 MHz Filters
• Linear Coilless FM/FSK Demodulator with Externally Programmable Bandwidth,
Center Frequency and Audio level
•2.7 to 6.5 V Operation, Low Current Drain (<27 mA, Typ @ 3.6 V) with Power Down
Mode (<10
µA,
Typ)
•2.4 GHz RF, 1.0 GHz IF1 and 50 MHz IF2 Bandwidth
P R S C O ut
PIN CONNECTIONS AND FUNCTIONAL BLOCK DIAGRAM
D et G ain
D et O ut
V CC
V CC
A F T In
R SSI
A F T O ut
VEE
1
48 V EE
47 BWadj
LNA
/64, 65
Lim
46 Lim Dec2
45 Lim Dec1
44 Lim In
43 V CC
42 V CC
41 IF Out
C ontrol
IF
40 IF Dec2
39 IF Dec1
38 IF In
37 V EE
25
VCC
26
V EE
27
IF 1+
28
IF 1–
29
LinA dj2
30
Mxr2In
31
VCC
32 33
V EE
LO 2
34
V EE
35
IF 2+
36
IF 2–
This device contains
626 active transistors.
IF2
VEE
MC
Fadj
2
12
V EE 13
LNA In 14
V EE 15
RF
V EE 16
LNA Out 17
V EE 18
Mxr1In 19
Lin Adj1 20
Enable 21
oscC 22
LO
oscE 23
oscB 24
11
10
9
8
7
6
5
4
3
Demod
ESD Sensitive —
Handle with Care
IF1
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LANSDALE [ LANSDALE SEMICONDUCTOR INC. ]
