Specifications
ispGDX160VA
Switching Test Conditions
Figure 8. Test Load
Input Pulse Levels
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to V
CCIO(MIN)
<
1.5ns 10% to 90%
V
CCIO(MIN)
/2
V
CCIO(MIN)
/2
See Figure 8
V
CCIO
R1
Device
Output
R2
CL
*
Test
Point
3-state levels are measured 0.5V from steady-state active level.
Output Load Conditions (See Figure 8)
3.3V
TEST CONDITION
A
B
Active High
Active Low
Active High to Z
at V
OH
-0.5V
Active Low to Z
at V
OL
+0.5V
Slow Slew
R1
153Ω
R2
134Ω
134Ω
R1
156Ω
2.5V
R2
CL
144Ω 35pF
144Ω 35pF
*
CL includes Test Fixture and Probe Capacitance.
0213D
∞
153Ω
∞
156Ω
∞
134Ω
∞
144Ω
35pF
5pF
5pF
35pF
∞
153Ω
∞
156Ω
C
D
∞
∞
∞
∞
∞
∞
Table 2-0004A/gdx160va
DC Electrical Characteristics for 3.3V Range
1
Over Recommended Operating Conditions
SYMBOL
PARAMETER
I/O Reference Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
CONDITION
–
V
OH
≤
V
OUT
or V
OUT
≤
V
OL (MAX)
V
OH
≤
V
OUT
or V
OUT
≤
V
OL(MAX)
V
CC
=
V
CC (MIN)
V
CC
=
V
CC (MIN)
I
OL
=
+100µA
I
OL
=
+24mA
I
OH
=
-100µA
I
OH
=
-12mA
MIN.
3.0
-0.3
2.0
–
–
2.8
2.4
TYP.
–
–
–
–
–
–
–
MAX. UNITS
3.6
0.8
5.25
0.2
0.55
–
–
V
V
V
V
V
V
V
V
CCIO
V
IL
V
IH
V
OL
V
OH
Output High Voltage
1. I/O voltage configuration must be set to VCC.
Table 2-0007/gdx160va
9
LATTICE [ LATTICE SEMICONDUCTOR ]
