Specifications
ispLSI 2064VE
Switching Test Conditions
Input Pulse Levels
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
3-state levels are measured 0.5V from
steady-state active level.
GND to 3.0V
≤
1.5 ns 10% to 90%
1.5V
1.5V
See Figure 2
Table 2-0003/2064VE
Figure 2. Test Load
+ 3.3V
R1
Device
Output
R2
C L
*
Test
Point
Output Load Conditions (see Figure 2)
TEST CONDITION
A
B
Active High
Active Low
Active High to Z
at
V
OH
-0.5V
Active Low to Z
at
V
OL
+0.5V
R1
316Ω
∞
316Ω
∞
316Ω
R2
348Ω
348Ω
348Ω
348Ω
348Ω
CL
35pF
35pF
35pF
5pF
5pF
*
CL includes Test Fixture and Probe Capacitance.
0213A/2064V
C
Table 2-0004/2064V
DC Electrical Characteristics
Over Recommended Operating Conditions
SYMBOL
PARAMETER
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
BSCAN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I
OL
= 8 mA
I
OH
= -4 mA
0V
≤
V
IN
≤
V
IL
(Max.)
(V
CC
– 0.2)V
≤
V
IN
≤
V
CC
V
≤
V
IN
≤
5.25V
CC
0V
≤
V
IN
≤
V
IL
0V
≤
V
IN
≤
V
IL
V
CC
= 3.3V, V
OUT
= 0.5V
V
IL
= 0.0V, V
IH
= 3.0V
f
CLOCK
= 1 MHz
CONDITION
MIN.
–
2.4
–
–
–
–
–
–
–
TYP.
–
–
–
–
–
–
–
–
90
3
MAX. UNITS
0.4
–
-10
10
10
-150
-150
-100
–
V
V
µA
µA
µA
µA
µA
mA
mA
V
OL
V
OH
I
IL
I
IH
I
IL-isp
I
IL-PU
I
OS
1
I
CC
2, 4
Table 2-0007/2064VE
1. One output at a time for a maximum duration of one second. V
OUT
= 0.5V was selected to avoid test
problems by tester ground degradation. Characterized but not 100% tested.
2. Measured using four 16-bit counters.
3. Typical values are at V
CC
= 3.3V and T
A
= 25°C.
4. Maximum I
CC
varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I
CC
.
4
LATTICE [ LATTICE SEMICONDUCTOR ]
