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HAIS200-P 参数 Datasheet PDF下载

HAIS200-P图片预览
型号: HAIS200-P
PDF下载: 下载PDF文件 查看货源
内容描述: 电流传感器 [Current Transducer]
分类和应用: 传感器
文件页数/大小: 3 页 / 776 K
品牌: LEM [ LEM ]
 浏览型号HAIS200-P的Datasheet PDF文件第2页浏览型号HAIS200-P的Datasheet PDF文件第3页  
Current Transducer HAIS 50..400-P
and HAIS 50..100-TP
For the electronic measurement of currents : DC, AC, pulsed, mixed,
with a galvanic isolation between the primary circuit (high power)
and the secondary circuit (electronic circuit).
I
PN
= 50 .. 400 A
All Data are given with a R
L
= 10 kΩ
Electrical data
Primary nominal
current rms
I
PN
(A)
50
100
150
200
400
Primary current,
measuring range
I
PM
(A)
±
±
±
±
±
150
300
450
600
600
Type
RoHS since
date code
45231, 46272
45231, 46012
46172
45231
planned
Features
Hall effect measuring principle
Galvanic isolation between primary
and secondary circuit
Isolation test voltage 2500V
Low power consumption
Single power supply +5V
Fixed offset & gain
Bus bar version available for 50A and
100A ratings.
Insulated plastic case recognized
according to UL94-V0.
HAIS 50-P, HAIS 50-TP
1)
HAIS 100-P, HAIS 100-TP
1)
HAIS 150-P
HAIS 200-P
HAIS 400-P
V
OUT
V
REF
R
L
R
OUT
C
L
V
C
I
C
Output voltage (Analog) @
I
P
I
P
= 0
2)
Reference voltage - Output voltage
V
REF
Output impedance
V
REF
Load impedance
Load resistance
Output internal resistance
Capacitive loading
Supply voltage (± 5 %)
Current consumption @
V
C
= 5 V
V
REF
± (0.625·I
P
/I
PN
) V
V
REF
± 0.025
V
2.5 ± 0.025
V
typ. 200
200
kΩ
2
k
<
10
<
1
µF
5
V
22
mA
Advantages
Small size and space saving
Only one design for wide current
ratings range
High immunity to external
interference.
V
REF.
IN/OUT
Accuracy - Dynamic performance data
X
ε
L
TCV
OE
TCV
REF
TCV
OUT
/
V
REF
TCV
OUT
V
OM
t
ra
t
r
di/dt
V
no
BW
Accuracy
3)
@
I
PN
,
T
A
= 25°C
Linearity error 0 .. 3 x
I
PN
Temperature coefficient of
V
OE
@
I
P
= 0
Temperature coefficient of
V
REF
Temperature coefficient of
V
OUT
/
V
REF
@
I
P
= 0
Temperature coefficient of
V
OUT
Magnetic offset voltage @
I
P
= 0,
after an overload of 3 x
I
PN DC
Reaction time @ 10 % of
I
PN
Response time to 90 % of
I
PN
step
di/dt accurately followed
Output voltage noise (DC ..10 kHz)
(DC .. 1 MHz)
Frequency bandwidth (-3 dB)
4)
±
±
±
±
±
1
0.5
0.3
0.01
0.2
% of
I
PN
% of
I
PN
mV/K
%/K
mV/K
Applications
AC variable speed drives
Static converters for DC motor drives
Battery supplied applications
Uninterruptible Power Supplies
(UPS)
Switched Mode Power Supplies
(SMPS)
Power supplies for welding
applications.
± 0.05
% of reading/K
< ± 0.4
<3
<5
> 100
< 15
< 40
DC .. 50
% of
I
PN
µs
µs
A/µs
mVpp
mVpp
kHz
Application Domain
Notes :
1)
2)
3)
4)
-TP version is equipped with a primary bus bar.
It is possible to overdrive
V
REF
with an external reference voltage
between 2 - 2.8 V providing its ability to sink or source approximately
2.5 mA.
Excluding offset and hysteresis.
Small signal only to avoid excessive heatings of the magnetic core.
Industrial
Page 1/3
061018/6
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.
www.lem.com