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GM71C4403CR-80 参数 Datasheet PDF下载

GM71C4403CR-80图片预览
型号: GM71C4403CR-80
PDF下载: 下载PDF文件 查看货源
内容描述: 1,048,576字× 4BIT CMOS动态RAM [1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM]
分类和应用: 内存集成电路光电二极管动态存储器
文件页数/大小: 10 页 / 112 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon
Pin Description
Pin
A0-A9
A0-A9
I/O1-I/O4
RAS
CAS
Function
Address Inputs
Refresh Address Inputs
Data Input / Data Output
Row Address Strobe
Column Address Strobe
Pin
WE
OE
V
CC
V
SS
GM71C4403C
Function
Read/Write Enable
Output Enable
Power (+5V)
Ground
Ordering Information
Type No.
GM71C4403CJ-60
GM71C4403CJ-70
GM71C4403CJ-80
GM71C4403CT-60
GM71C4403CT-70
GM71C4403CT-80
GM71C4403CR-60
GM71C4403CR-70
GM71C4403CR-80
Access Time
60ns
70ns
80ns
60ns
70ns
80ns
60ns
70ns
80ns
Package
300 Mil, 20 (26) Pin
Plastic SOJ
300 Mil, 20 (26) Pin
Plastic TSOP II
(Normal Type)
300 Mil, 20 (26) Pin
Plastic TSOP II
(Reverse Type)
Absolute Maximum Ratings*
Symbol
T
A
T
STG
V
IN
/V
OUT
V
CC
I
OUT
P
D
Parameter
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to V
SS
Voltage on V
CC
Relative to V
SS
Short Circuit Output Current
Power Dissipation
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 7.0
-1.0 ~ 7.0
50
1.0
Unit
C
C
V
V
mA
W
*Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Recommended DC Operating Conditions
(All Voltage referenced to Vss, T
A
= 0 ~ 70C)
Symbol
V
CC
V
IH
V
IL
2
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Min
4.5
2.4
-1.0
Typ
5.0
-
-
Max
5.5
6.5
0.8
Unit
V
V
V