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GM71C4403CR 参数 Datasheet PDF下载

GM71C4403CR图片预览
型号: GM71C4403CR
PDF下载: 下载PDF文件 查看货源
内容描述: 1,048,576字× 4BIT CMOS动态RAM [1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 10 页 / 112 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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LG Semicon Co.,Ltd.
Description
The GM71C4403C is the new generation dynamic
RAM organized 1,048,576 words x 4 bit.
GM71C4403C has realized higher density, higher
performance and various functions by utilizing
advanced CMOS process technology. The
GM71C4403C offers Extended Data Out (EDO)
Mode as a high speed access Mode. Multiplexed
address inputs permit the GM71C4403C to be
packaged in a standard 300mil 20(26) pin plastic
SOJ , and standard 300mil 20(26) pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely available
automated testing and insertion equipment. System
oriented features include single power supply of
5V+/-10% tolerance, direct interfacing capability
with high performance logic families such as
Schottky TTL.
GM71C4403C
1,048,576 WORDS x 4BIT
CMOS DYNAMIC RAM
Features
* 1,048,576 Words x 4 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
GM71C4403C-60
GM71C4403C-70
GM71C4403C-80
60
70
80
t
CAC
15
18
20
t
RC
104
124
144
t
HPC
25
30
35
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
*1024 Refresh Cycles/16ms
Pin Configuration
20 (26) SOJ
I/O1
I/O2
WE
RAS
A9
1
2
3
4
5
20
19
18
17
16
20 (26) TSOP II
V
SS
I/O4
I/O3
CAS
OE
I/O1
I/O2
WE
RAS
A9
1
2
3
4
5
20
19
18
17
16
V
SS
I/O4
I/O3
CAS
OE
V
SS
I/O4
I/O3
CAS
OE
20
19
18
17
16
1
2
3
4
5
I/O1
I/O2
WE
RAS
A9
A0
A1
A2
A3
V
CC
6
7
8
9
10
15
14
13
12
11
A8
A7
A6
A5
A4
A0
A1
A2
A3
V
CC
6
7
8
9
10
15
14
13
12
11
A8
A7
A6
A5
A4
A8
A7
A6
A5
A4
15
14
13
12
11
6
7
8
9
10
A0
A1
A2
A3
V
CC
NORMAL TYPE
REVERSE TYPE
(Top View)
(Top View)
1