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GM71S4400CLR 参数 Datasheet PDF下载

GM71S4400CLR图片预览
型号: GM71S4400CLR
PDF下载: 下载PDF文件 查看货源
内容描述: 1,048,576字× 4BIT CMOS动态RAM [1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM]
分类和应用:
文件页数/大小: 9 页 / 107 K
品牌: LG [ LG SEMICON CO.,LTD. ]
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GM71C(S)4400C/CL  
LG Semicon  
Read- Modify-Write Cycle  
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400  
C/CL-60 C/CL-70 C/CL-80  
Unit Note  
Symbol  
Parameter  
Min Max Min Max Min Max  
t
t
t
t
t
RWC  
RWD  
CWD  
AWD  
OEH  
Read-Modify-Write Cycle Time  
RAS to WE Delay Time  
150  
80  
35  
50  
15  
-
-
-
-
-
180  
95  
45  
60  
20  
-
-
-
-
-
200  
105  
45  
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
10  
10  
10  
CAS to WE Delay Time  
Column Address to WE Delay Time  
OE Hold Time from WE  
65  
20  
Refresh Cycle  
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400  
C/CL-60 C/CL-70 C/CL-80  
Unit Note  
Symbol  
Parameter  
Min Max Min Max Min Max  
t
t
CSR  
CAS Set-up Time  
(CAS-before-RAS Refresh Cycle)  
10  
10  
-
-
10  
10  
-
-
10  
10  
-
-
ns  
ns  
CHR  
CAS Hold Time  
(CAS-before-RAS Refresh Cycle)  
t
t
RPC  
CPN  
RAS Precharge to CAS Hold Time  
CAS Precharge Time in Normal Mode  
10  
10  
-
-
10  
10  
-
-
10  
10  
-
-
ns  
ns  
Fast Page Mode Cycle  
GM71C(S)4400 GM71C(S)4400 GM71C(S)4400  
C/CL-60 C/CL-70 C/CL-80  
Unit Note  
Symbol  
Parameter  
Min Max Min Max Min Max  
t
t
t
t
t
t
PC  
Fast Page Mode Cycle Time  
40  
10  
-
-
-
45  
10  
-
-
-
50  
10  
-
-
-
ns  
ns  
CP  
Fast Page Mode CAS Precharge Time  
Fast Page Mode RAS Pulse Width  
Access Time from CAS Precharge  
RAS Hold Time from CAS Precharge  
100,000  
100,000  
100,000  
RASP  
ACP  
RHCP  
CPW  
ns  
ns  
ns  
ns  
12  
-
35  
-
-
40  
-
-
45  
-
3,13,17  
35  
40  
65  
45  
70  
Fast Page Mode Read-Modify-Write Cycle 55  
CAS Precharge to WE Delay Time  
-
-
-
t
PRWC  
Fast Page Mode Read-Modify-Write Cycle  
Time  
80  
-
95  
-
100  
-
ns  
10  
6