LS4117, 4118, 4119
Linear Integrated Systems
ULTRA-HIGH INPUT IMPEDANCE
N-CHANNEL JFET
FEATURES
LOW POWER
MINIMUM CIRCUIT LOADING
I
DSS
<90
µ
A (2N4117)
I
GSS
<1 pA (2N4117A Series)
D
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
@ 25°C (unless otherwise noted)
Gate-Source or Gate-Drain Voltage
(NOTE 1)
Gate-Current
Total Device Dissipation
(Derate 2mW/°C to 175°C)
Storage Temperature Range
Lead Temperature
(1/16" from case for 10 seconds)
G
2
3
4
Case
G
-40V
50mA
S
D
1
C
S
300mW
-65°C to +175°C
255°C
TO-72
Bottom View
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
2N4117/A
2N4118
FN4117/A
2N4118A
SYMBOL
CHARACTERISTICS
MIN MAX MIN
MAX
Gate Reverse Current
--
-10
--
-10
I
GSS
Standard only
--
-25
--
-25
I
GSS
Gate Reverse Current
--
-1
--
-1
BV
GSS
V
GS(off)
I
DSS
g
fs
g
os
C
iss
C
rss
"A" Series only
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
--
-40
-0.6
-2.5
--
-1.8
0.09
210
3
3
1.5
--
-40
-1
0.08
80
--
--
--
-2.5
--
-3
0.24
250
5
3
1.5
2N4119
2N4119A
MIN MAX
--
-10
--
-25
--
-1
--
-40
-2
0.20
100
--
--
--
-2.5
--
-6
0.60
330
10
3
1.5
UNITS
pA
nA
pA
nA
V
mA
CONDITIONS
V
GS
= -20V V
DS
= 0
150°C
V
GS
=-20V V
DS
= 0
150°C
I
G
=-1µA
V
DS
=10V
V
DS
=10V
V
DS
= 0
I
D
= 1nA
V
GS
= 0
Saturation Drain Current
0.03
(NOTE 2)
FN4117/A 0.015
Common-Source Forward
70
Transconductance
(NOTE 2)
Common-Source Output
--
Conductance
Common-Source Input
--
Capacitance
Common-Source Reverse
--
Transfer Capacitance
µmho
f=1kHz
V
DS
= 10V
pF
V
GS
= 0
f=1MHz
NOTES:
1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged.
2. This parameter is measured during a 2 ms interval 100 ms after power is applied. (Not a JEDEC condition.)
Linear Integrated Systems
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