2N4351
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 2N4351
HIGH DRAIN CURRENT
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
Drain to Source
Maximum Voltages
Drain to Body
Drain to Source
Peak Gate to Source
2
N-CHANNEL MOSFET
ENHANCEMENT MODE
I
D
= 100mA
g
fs
= 1000µS
TO-72
BOTTOM VIEW
G
2
3
D
-65 to +200 °C
-55 to +150 °C
375mW
100mA
25V
25V
±125V
* Body tied to Case.
S
1
4
C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
BV
DSS
V
DS(on)
V
GS(th)
I
GSS
I
DSS
I
D(on)
g
fs
r
DS(on)
C
rss
C
iss
C
db
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain to Source "On" Voltage
Gate to Source Threshold Voltage
Gate Leakage Current
Drain Leakage Current "Off"
Drain Current "On"
Forward Transconductance
Drain to Source "On" Resistance
Reverse Transfer Capacitance
Input Capacitance
Drain to Body Capacitance
3
1000
300
1.3
5.0
5.0
pF
1
MIN
25
1
5
10
10
pA
nA
mA
µS
Ω
V
TYP
MAX UNITS
CONDITIONS
I
D
= 10µA, V
GS
= 0V
I
D
= 2mA, V
GS
= 10V
V
DS
= 10V, I
D
= 10µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 10V, V
GS
= 0V
V
GS
= 10V, V
DS
= 10V
V
DS
= 10V, I
D
= 2mA,
f
= 1MHz
V
GS
= 10V, I
D
= 0A,
f
= 1kHz
V
DS
= 0V, V
GS
= 0V,
f
= 140kHz
V
DS
= 10V, V
GS
= 0V,
f
= 140kHz
V
DB
= 10V,
f
= 140kHz
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
