2N/PN/SST4391
SERIES
Linear Integrated Systems
FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature (2N)
Storage Temperature (PN/SST)
Junction Operating Temperature (2N)
Junction Operating Temperature (PN/SST)
Maximum Power Dissipation
Continuous Power Dissipation (2N)
Continuous Power Dissipation (PN/SST)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain or Source (2N/PN)
Gate to Drain or Source (SST)
-40V
-35V
50mA
1800mW
350mW
-65 to 200°C
-55 to 150°C
-55 to 200°C
-55 to 150°C
S
1
SINGLE N-CHANNEL JFET SWITCH
r
DS(on)
≤
30Ω
t
ON
≤
15ns
1
2N SERIES
TO-18
BOTTOM VIEW
D
2
3
PN SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
D
1
3
G
D S G
1 2 3
S
2
G
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
V
DS(on)
CHARACTERISTIC
Gate to Source
Breakdown Voltage
Gate to Source
Cutoff Voltage
2N/PN
SST
2N/PN
SST
0.7
0.25
Drain to Source On Voltage
2N
PN
SST
2N/SST
PN
-5
-5
-5
0.3
0.35
I
DSS
Drain to Source
2
Saturation Current
Gate Leakage Current
Gate Operating Current
50
50
50
-100
-1000
0.4
150
100
25
25
25
-100
-1000
75
100
5
5
5
-100
-1000
pA
V
GS
= -20V, V
DS
= 0V
V
DG
= 15V, I
D
= 10mA
30
60
mA
V
DS
= 20V, V
GS
= 0V
0.4
TYP
4391
MIN
-40
-35
-4
-4
-10
-10
1
MAX
4392
MIN
-40
-35
-2
-2
-5
-5
1
MAX
4393
MIN
-40
-35
-0.5
-0.5
-3
-3
1
0.4
V
MAX
UNIT
CONDITIONS
I
G
= -1µA, V
DS
= 0V
V
DS
= 20V, I
D
= 1nA
V
DS
= 15V, I
D
= 10nA
I
G
= 1mA, V
DS
= 0V
V
GS
= 0V, I
D
= 3mA
V
GS
= 0V, I
D
= 6mA
V
GS
= 0V, I
D
= 12mA
Gate to Source Forward Voltage
I
GSS
I
G
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
