2N/SST4416 2N4416A
Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A
VERY LOW NOISE FIGURE (400 MHz)
EXCEPTIONAL GAIN (400 MHz)
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain or Gate to Source LS4416
Gate to Drain or Gate to Source LS4416A
-30V
-35V
*Optional Package For 2N4416
10mA
300mW
-65 to +200 °C
-55 to +135 °C
4 dB (max)
10 dB (min)
2N SERIES
2N SERIES*
SST SERIES
SOT-23
TOP VIEW
D
S D G
1 2 3
S
1
4
1
3
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER
TO-92
TO-72
BOTTOM VIEW
BOTTOM VIEW
D
2
3
G
G
S
2
C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(off)
I
DSS
I
GSS
g
fs
g
os
C
iss
C
rss
C
oss
e
n
CHARACTERISTIC
Gate to Source
Breakdown Voltage
Gate to Source
Cutoff Voltage
2N/SST4416
2N4416A
2N/SST4416
2N4416A
2N
SST
4500
-2.5
5
MIN
-30
-35
-6
-6
15
-0.1
-1.0
7500
50
0.8
4
2
6
nV/√Hz
V
DS
= 10V, V
GS
= 0V,
f
= 1kHz
pF
V
DS
= 15V, V
GS
= 0V,
f
= 1MHz
mA
nA
µS
V
V
DS
= 15V, I
D
= 1nA
V
DS
= 15V, V
GS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DS
= 15V, V
GS
= 0V,
f
= 1kHz
TYP
MAX UNITS
CONDITIONS
I
G
= -1µA, V
DS
= 0V
Gate to Source Saturation Current
Gate Leakage Current
Forward Transconductance
Output Conductance
Input Capacitance
2
Reverse Transfer Capacitance
2
Output Capacitance
2
Equivalent Input Noise Voltage
Linear Integrated Systems
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