2N5114 SERIES
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5114
LOW ON RESISTANCE
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
30V
30V
-50mA
500mW
-55 to 200°C
-55 to 200°C
1
SINGLE P-CHANNEL JFET
75Ω
6pF
TO-18
BOTTOM VIEW
G
2
3
D
S
1
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
V
DS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source On Voltage
-0.7
-1.0
-0.7
-0.5
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
Drain to Source Saturation Current
2
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
5
-5
-10
-10
-10
75
100
-500
-500
-500
150
Ω
pA
-30
-90
-15
500
-60
500
-5
-25
500
TYP
2N5114
MIN
30
5
10
-1
-1.3
-0.8
-0.6
mA
MAX
2N5115
MIN
30
3
6
-1
MAX
2N5116
MIN
30
1
4
-1
V
MAX
UNIT
CONDITIONS
I
G
= 1µA, V
DS
= 0V
V
DS
= -15V, I
D
= -1nA
I
G
= -1mA, V
DS
= 0V
V
GS
= 0V, I
D
= -15mA
V
GS
= 0V, I
D
= -7mA
V
GS
= 0V, I
D
= -3mA
V
DS
= -18V, V
GS
= 0V
V
DS
= -15V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DG
= -15V, I
D
= -1mA
V
DS
= -15V, V
GS
= 12V
V
DS
= -15V, V
GS
= 7V
V
DS
= -15V, V
GS
= 5V
V
GS
= 0V, I
D
= -1mA
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
