J/SST174 SERIES
Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX J/SST174 SERIES
LOW ON RESISTANCE
LOW GATE OPERATING CURRENT
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
V
GDS
= 30V
V
GSS
= 30V
I
G
= -50mA
350mW
-55 to 150°C
-55 to 135°C
D G S
1 2 3
SINGLE P-CHANNEL
JFET SWITCH
r
DS(on)
≤
85Ω
I
D(off)
= 10pA
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
D
S
1
3
2
G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(F)
I
GSS
I
G
I
D(off)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
MIN
30
-0.7
0.01
0.01
-0.01
-1
1
nA
TYP
MAX UNITS
V
CONDITIONS
I
G
= 1µA, V
DS
= 0V
I
G
= -1mA, V
DS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DG
= -15V, I
D
= -1mA
V
DS
= -15V, V
GS
= 10V
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
V
GS(off)
I
DSS
r
DS(on)
CHARACTERISTIC
Gate to Source
Cutoff Voltage
Drain to Source
Saturation Current
Drain to Source
On Resistance
J/SST174
MIN
5
-20
MAX
10
-135
85
J/SST175
MIN
3
-7
MAX
6
-70
125
J/SST176
MIN
1
-2
MAX
4
-35
250
J/SST177
MIN
0.8
-1.5
MAX
2.25
-20
300
UNITS
V
mA
Ω
CONDITIONS
V
DS
= -15V, I
D
= -10nA
V
DS
= -15V, V
GS
= 0V
V
GS
= 0V, V
DS
= -0.1V
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
