U/J/SST308
SERIES
Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX U/J/SST308 SERIES
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation (J/SST)
Continuous Power Dissipation (U)
Maximum Currents
Gate Current (J/SST)
Gate Current (U)
Maximum Voltages
Gate to Drain
Gate to Source
-25V
-25V
10mA
20mA
350mW
500mW
D
S
1
SINGLE N-CHANNEL HIGH
FREQUENCY JFET
G
pg
= 11.5dB
NF = 2.7dB
TO-18
BOTTOM VIEW
D
2
3
J SERIES
TO-92
BOTTOM VIEW
D S G
G
-55 to 150°C
-55 to 135°C
S
1
1 2 3
SST SERIES
SOT-23
TOP VIEW
1
3
2
G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(F)
I
G
r
DS(on)
e
n
NF
G
pg
g
fg
g
og
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate Operating Current
Drain to Source On Resistance
Equivalent Noise Voltage
Noise Figure
Power Gain
2
MIN
-25
0.7
TYP
MAX
1
UNIT
V
pA
Ω
nV/√Hz
CONDITIONS
I
G
= -1µA, V
DS
= 0V
I
G
= 10mA, V
DS
= 0V
V
DG
= 9V, I
D
= 10mA
V
GS
= 0V, I
D
= 1mA
V
DS
= 10V, I
D
= 10mA,
f
= 100Hz
-15
35
6
f
= 105MHz
f
= 450MHz
f
= 105MHz
f
= 450MHz
f
= 105MHz
f
= 450MHz
f
= 105MHz
f
= 450MHz
1.5
2.7
16
11.5
14
13
0.16
0.55
dB
V
DS
= 10V, I
D
= 10mA
mS
Forward
Transconductance
Output Conductance
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
