MATCHING CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Base Emitter Voltage Differential
|V
BE1
-V
BE2
|
∆|(V
BE1
-V
BE2
)|/°C
|I
B1
- I
B2
|
h
FE1
/h
FE2
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
DC Current Gain Differential
LS301
0.2
1
1
5
0.5
1
5
LS302
0.2
1
1
5
1
5
5
LS303
0.2
1
1
5
0.5
1.5
5
UNITS
TYP.
mV
MAX.
mV
TYP.
MAX.
TYP.
MAX.
TYP.
µV/°C
µV/°C
nA
nA
%
CONDITIONS
I
C
= 10
µA
I
C
= 10
µA
T = -55°C
I
C
= 10µA
I
C
= 10µA
I
C
= 10µA
to
V
CE
= 5V
V
CE
= 5V
+125°C
V
CE
= 1V
V
CE
= 5V
V
CE
= 5V
TO-71
Six Lead
0.195
DIA.
0.175
0.030
MAX.
0.230
DIA.
0.209
0.150
0.115
TO-78
0.305
0.335
0.335
0.370
MAX.
0.040 0.165
0.185
MIN. 0.500
SEATING
PLANE
0.200
0.100
2 3 4
1
5
8 7 6
P-DIP
0.320
(8.13)
0.290
(7.37)
0.405
(10.29)
MAX.
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.016
0.019
DIM. A
0.016
0.021
DIM. B
0.029
0.045
6 LEADS
0.019 DIA.
0.016
0.100
0.500 MIN.
0.050
2 3 4
1
8
5
6
7
SOIC
0.150
(3.81)
0.158
(4.01)
0.100
45°
0.046
0.036
45°
0.048
0.028
0.028
0.034
0.188
(4.78)
0.197
(5.00)
C1
B1
E1
N/C
1
2
3
4
8
7
6
5
C2
B2
E2
N/C
0.228
(5.79)
0.244
(6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
µAmps.
3. For LS301 & LS302: V
CB
= 10V; for LS303: V
CB
= 5V.
4. For LS301 & LS302: V
CC
=
±80V;
for LS303: V
CC
=
±20V.
Linear Integrated Systems
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