LS310 LS311 LS312 LS313
Linear Integrated Systems
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
VERY HIGH GAIN
TIGHT V
BE
MATCHING
HIGH f
T
h
FE
≥
200 @ 10µA-1mA
|V
BE1
-V
BE2
| = 0.2mV TYP.
250MHz TYP. @ 1mA
C1
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
°
C (unless otherwise noted)
Collector Current
10mA
I
C
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
C2
E1
3
5
E2
B1
2
6
B2
-65° to +200°C
+150°C
B1
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
E1
E2
B2
1
C1
7
C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS310 LS311 LS312 LS313
UNITS CONDITIONS
Collector to Base Voltage
25
45
60
45
MIN. V
I
C
= 10µA I
E
= 0
BV
CBO
BV
CEO
BV
EBO
BV
CCO
h
FE
h
FE
h
FE
I
CBO
I
EBO
C
OBO
C
C1C2
I
C1C2
f
T
NF
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
DC Current Gain
DC Current Gain
Collector Cutoff Current
Emitter Cutoff Current
Output Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Current Gain Bandwidth Product
Narrow Band Noise Figure
25
6.2
30
150
150
150
0.25
0.2
0.2
2
2
0.5
200
3
45
6.2
100
150
150
150
0.25
0.2
0.2
2
2
0.5
200
3
60
6.2
100
200
200
200
0.25
0.2
0.2
2
2
0.5
200
3
45
6.2
100
MIN.
MIN.
MIN.
V
V
V
I
C
= 10µA
I
E
= 10µA
I
C
= 10µA
I
C
= 10µA
I
B
= 0
I
C
= 0
I
E
= 0
V
CE
= 5V
NOTE 2
400 MIN.
1000 MAX.
400 MIN.
400
0.25
0.2
0.2
2
2
0.5
200
3
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
nA
nA
pF
pF
nA
MHz
dB
I
C
= 100µA V
CE
= 5V
I
C
= 1mA
I
C
= 1mA
I
E
= 0
I
E
= 0
I
E
= 0
V
CC
= 0
V
CC
= NOTE 4
I
C
= 1mA
V
CE
= 5V
I
C
= 100µA V
CE
= 5V
BW = 200Hz, R
G
= 10 KΩ
f=1KHz
V
CE
= 5V
I
B
= 0.1mA
V
CB
= NOTE 3
V
CB
= 3V
V
CB
= 5V
V
CE
(SAT) Collector Saturation Voltage
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
