LS320
Linear Integrated Systems
FEATURES
HIGH INPUT IMPEDANCE
HIGH TRANSCONDUCTANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
Drain Current
Maximum Voltages
Drain to Source
1
Gate to Source
V
DSO
= 20V
V
GSS
= 20V
I
D
= 25mA
200mW
-65 to +150 °C
-55 to +125 °C
r
Gs
= 100GΩ
Y
FS
= 30,000µS
HIGH INPUT IMPEDANCE
BiFET AMPLIFIER
TO-72
BOTTOM VIEW
S
2
3
D
S
1
4
G
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
V
DS
V
GS
g
fs
g
oss
r
Gs
C
ISS
C
RSS
e
n
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Common Source Forward Transconductance
Common Source Output Conductance
Gate to Source Input Resistance
Input Capacitance
Reverse Transfer Capacitance
Noise Voltage
100
8
1.5
25
MIN
-20
-12
30,000
300
-10
-7
TYP
MAX UNITS
V
V
µS
µS
GΩ
pF
pF
µV
CONDITIONS
I
DS
= 100µA, V
GS
= 0V
I
DS
= 10mA, V
gs
= -10V
2,3
I
DS
= 10mA, V
DS
= -10V,
f
= 1kHz
I
DS
= 10mA, V
DS
= -10V,
f
= 1kHz
V
GS
= 0 to 20V, T
J
to 125 °C
I
DS
= 10mA, V
DS
= -10V
I
DS
= 10mA, V
DS
= -10V
I
DS
= 10mA, V
DS
= 10V
BW = 50 to 15kHz
PACKAGE OPTIONS
FUNCTIONAL SCHEMATIC
SOT-23
TOP VIEW
D
G
1
3
2
TO-92
BOTTOM VIEW
S
D
G
S
D S G
1 2 3
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. The gate to source voltage must never exceed 100V, t < 10ms.
3. Additional screening available
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems
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