欢迎访问ic37.com |
会员登录 免费注册
发布采购

LS5909 参数 Datasheet PDF下载

LS5909图片预览
型号: LS5909
PDF下载: 下载PDF文件 查看货源
内容描述: 低漏低漂移整体式双N沟道JFET [LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET]
分类和应用:
文件页数/大小: 2 页 / 31 K
品牌: LINEAR [ LINEAR INTEGRATED SYSTEMS ]
 浏览型号LS5909的Datasheet PDF文件第2页  
LS5905 LS5906 LS5907
LS5908 LS5909
Linear Integrated Systems
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
LOW PINCHOFF
|∆V
GS1-2
/∆T|= 5µV/°C max.
I
G
= 150fA TYP.
V
P
= 2V TYP.
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
D1
S1
G2
G1
3
5
S2
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-V
GSS
-V
DSO
-I
G(f)
-I
G
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
10mA
10µA
D1
2
D2
S1
G1
S2
6
D2
1
7
G2
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
22 X 20 MILS
40mW @ +125°C
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS5906 LS5907 LS5908 LS5909 LS5905
5
10
20
40
40
|∆V
GS1-2
/∆T| max. Drift vs. Temperature
|V
GS1-2
| max.
-I
G
max.
-I
G
max.
-I
GSS
max.
-I
GSS
max.
SYMBOL
BV
GSS
BV
GGO
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
I
DSS
|I
DSS1-2
/I
DSS
|
V
GS
(off) or V
P
V
GS
I
GGO
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
5
1
1
2
5
MIN.
40
40
70
50
--
60
--
0.6
--
--
5
1
1
2
5
TYP.
60
--
300
100
1
400
2
2
--
1
10
1
1
2
5
MAX.
--
--
500
200
5
1000
5
4.5
4
--
15
1
1
2
5
UNITS
V
V
µmho
µmho
%
µA
%
V
V
pA
15
3
3
5
10
UNITS CONDITIONS
µV/°C
V
DG
= 10V, I
D
= 30µA
T
A
=-55°C to +125°C
mV
pA
nA
pA
nA
T
A
= +125°C
V
DS
= 0V
T
A
= +125°C
V
GS
= 20V
V
DG
=10V
I
D
= 30µA
CONDITIONS
V
DS
= 0
I
D
= 1nA
I
G
= 1nA
V
DG
= 10V
V
DG
= 10V
I
D
= 0
V
GS
= 0
I
D
= 30µA
I
S
= 0
f= 1kHz
f= 1kHz
V
DG
= 10V
V
GS
= 0
V
DS
= 10V
V
DS
= 10V
V
GG
=20V
I
D
= 1nA
I
D
= 30µA
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261