LS5911 LS5912 LS5912C
Linear Integrated Systems
FEATURES
Improved Replacement for SILICONIX, FAIRCHILD, &
NATIONAL: 2N5911 & 2N5912
LOW NOISE (10kHz)
e
n
~ 4nV/√Hz
HIGH TRANSCONDUCTANCE (100MHz)
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
-25V
-25V
50mA
500mW
S1
D1
SS
G1
1
2
3
4
IMPROVED LOW NOISE
WIDEBAND MONOLITHIC
DUAL N-CHANNEL JFET
TO-71
BOTTOM VIEW
TO-78
BOTTOM VIEW
G1
D1
S1
SOT-23
TOP VIEW
1
2
3
6
5
4
g
fs
≥
4000µS
G1
D1
S1
2
3
5
6
S2
D2
G2
PDIP-A
G1
D1
S1
2
3
5
6
S2
D2
G2
S2
D2
G2
1
7
1
7
PDIP-B
8
7
6
5
-65 to +150 °C
-55 to +150 °C
S1
D1
SS
G1
1
2
3
4
G2
SS
D2
S2
S1
D1
G1
NC
1
2
3
4
8
7
6
5
NC
G2
D2
S2
SOIC-A
8
7
6
5
SOIC-B
G2
SS
D2
S2
S1
D1
G1
NC
1
2
3
4
8
7
6
5
NC
G2
D2
S2
MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
TYP
LS5911
MIN
MAX
LS5912
MIN
MAX
LS5912C
MIN
MAX
UNIT
CONDITIONS
V
GS1
−
V
GS2
∆
V
GS1
−
V
GS2
∆T
I
DSS1
I
DSS2
Differential Gate to Source
Cutoff Voltage
Differential Gate to Source
Cutoff Voltage Change with
Temperature
Gate to Source Saturation
Current Ratio
Differential Gate Current
Forward Transconductance
Ratio
2
Common Mode Rejection
Ratio
85
10
20
0.95
1
20
0.95
1
0.95
0.95
15
40
1
20
1
0.95
0.95
40
40
1
20
1
mV
µV/°C
%
nA
%
dB
V
DG
= 10V, I
D
= 5mA
V
DG
= 10V, I
D
= 5mA
T
A
= -55 to +125°C
V
DS
= 10V, V
GS
= 0V
V
DG
= 10V, I
D
= 5mA
T
A
= +125°C
V
DS
= 10V, I
D
= 5mA
f
= 1kHz
V
DG
= 5V to 10V
I
D
= 5mA
I
G1
−
I
G2
g
fs1
g
fs2
CMRR
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
V
GS
I
DSS
I
GSS
I
G
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Gate to Source Voltage
Drain to Source Saturation Current
Gate Leakage Current
Gate Operating Current
3
TYP
LS5911
MIN
-25
-1
-5
-4
40
-50
-50
MAX
LS5912
MIN
-25
-1
-0.3
7
-5
-4
40
-50
-50
MAX
LS5912C
MIN
-25
-1
-0.3
7
-5
-4
40
-50
-50
MAX
UNIT
CONDITIONS
I
G
= -1µA, V
DS
= 0V
0.7
-0.3
7
-1
-1
V
V
DS
= 10V, I
D
= 1nA
I
G
= 1mA, V
DS
= 0V
V
DG
= 10V, I
G
= 5mA
V
DS
= 10V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DG
= 10V, I
D
= 5mA
mA
pA
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
