LS627
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR CRYSTALONICS FF627
FLAT GLASS TOP FOR EXTERNAL OPTICS
ULTRA HIGH SENSITIVITY
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
Gate Current
Maximum Voltages
Drain to Source
Drain to Gate
Gate to Source
15V
15V
-10V
50mA
400mW
-65 to +200 °C
-55 to +165 °C
PHOTO FET
LIGHT SENSITIVE JFET
TO-72
BOTTOM VIEW
D
2
3
G
S
1
4
C
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
V
GS(off)
S
G
S
D
λ
Ig
λ
Id
I
DSS
I
GSS
g
fs
R
DS(on)
C
GS
C
GD
t
r
t
f
CHARACTERISTIC
Gate to Source Cutoff Voltage (V
PO
)
Gate Sensitivity
2
3
4
4
MIN
1.0
6.4
TYP
MAX
5.0
24
UNITS
V
µA/mW/cm
nA/FC
µA/FC
mA
2
2
CONDITIONS
V
DS
= 10V, I
D
= 0.1µA
V
DS
= 10V, V
GS
= 0V,
λ
= 0.9µm
V
DS
= 10V, V
GS
= 0V, R
G
= 1MΩ
V
DS
= 10V, V
GS
= 0V
V
DS
= 10V, V
GS
= 0V, R
G
= 1MΩ
V
DS
= 10V, V
GS
= 0V
V
GS
= -10V, V
DS
= 0V
V
DS
= 10V, V
GS
= 0V,
f
= 1kHz
V
DS
= 0.1V, V
GS
= 0V
V
GS
= -10V,
f
= 140kHz
V
GD
= -10V,
f
= 140kHz
V
DS
= 10V, R
L
= R
G
= 100Ω
Drain Sensitivity
500
10
800
8.0
30
8000
100
35
20
30
50
37.5
mA/mW/cm
Gate Current (Light)
Drain Current (Light)
Drain Saturation Current
Gate Leakage Current (Dark)
Forward Transconductance (g
m
)
Drain to Source On Resistance
Gate to Source Capacitance
Gate to Drain Capacitance
Rise Time
5
Fall Time
6
pA
µS
Ω
pF
ns
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
