LS830 LS831 LS832 LS833
Linear Integrated Systems
FEATURES
ULTRA LOW DRIFT
ULTRA LOW LEAKAGE
LOW NOISE
LOW CAPACITANCE
|∆V
GS1-2
/∆T|= 5µV/°C max.
I
G
= 80fA TYP.
e
n
= 70nV/√Hz TYP.
C
ISS
= 3pf MAX.
ULTRA LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
D1
S1
G2
G1
3
5
S2
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
40V
-V
GSS
-V
DSO
-I
G(f)
-I
G
Drain to Source Voltage
Gate Forward Current
Gate Reverse Current
40V
10mA
10µA
D1
2
D2
6
D2
1
S1
7
G2
G1
S2
BOTTOM VIEW
22 X 20 MILS
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
40mW @ +125°C
LS833
75
25
0.5
0.5
1.0
1.0
UNITS
µV/°C
mV
pA
nA
pA
nA
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS830 LS831 LS832
5
10
20
|∆V
GS1-2
/∆T| max. Drift vs. Temperature
|V
GS1-2
| max.
-I
G
max
-I
G
max
-I
GSS
-I
GSS
Offset Voltage
Operating
High Temperature
At Full Conduction
High Temperature
25
0.1
0.1
0.2
0.5
25
0.1
0.1
0.2
0.5
25
0.1
0.1
0.2
0.5
CONDITIONS
V
DG
= 10V
V
DG
= 10V
T
A
= +125°C
V
GS
= 0
T
A
= +125°C
I
D
= 30µA
I
D
= 30µA
T
A
= -55°C to +125°C
V
GS
= -20V
SYMBOL
BV
GSS
BV
GGO
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
I
DSS
|I
DSS1-2
/I
DSS
|
V
GS
(off) or V
P
V
GS
I
GGO
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Gate-to-Gate Leakage
MIN.
40
40
70
50
--
60
--
0.6
--
--
TYP.
60
--
300
100
1
400
2
2
--
1
MAX.
--
--
500
200
5
1000
5
4.5
4
--
UNITS
V
V
µmho
µmho
%
µA
%
V
V
pA
CONDITIONS
V
DS
= 0
I
D
= 1nA
I
G
= 1nA
V
DG
= 10V
V
DG
= 10V
I
D
= 0
V
GS
= 0
I
D
= 30µA
I
S
= 0
f= 1kHz
f= 1kHz
V
DG
= 10V
V
GS
= 0
V
DS
= 10V
V
DG
= 10V
V
GG
= 20V
I
D
= 1nA
I
D
= 30µA
Linear Integrated Systems
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