LS843 LS844 LS845
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE
LOW LEAKAGE
LOW DRIFT
ULTRA LOW OFFSET VOLTAGE
ULTRA LOW NOISE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
e
n
= 3nV/√Hz TYP.
I
G
= 15pA TYPs.
|∆V
GS1-2
/∆T|= 5µV/°C max.
IV
GS1-2
I= 1mV max.
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +150°C
+150°C
D1
S1
G1
G2
S2
D2
31 X 32 MILS
G1
3
5
S2
D1
2
6
D2
Maximum Voltage and Current for Each Transistor NOTE 1
Gate Voltage to Drain or Source
60V
-V
GSS
-V
DSO
-I
G(f)
Drain to Source Voltage
Gate Forward Current
60V
50mA
1
S1
7
G2
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
BOTTOM VIEW
400mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25
°
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS843 LS844 LS845 UNITS
5
10
25
µV/°C
|∆V
GS1-2
/∆T| max. Drift vs. Temperature
|V
GS1-2
| max.
SYMBOL
BV
GSS
BV
GGO
Y
fss
Y
fs
|Y
fs1-2
/Y
fs
|
I
DSS
|I
DSS1-2
/I
DSS
|
V
GS
(off) or V
P
V
GS
-I
G
-I
G
-I
G
-I
GSS
Offset Voltage
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Conduction
Mismatch
DRAIN CURRENT
Full Conduction
Mismatch at Full Conduction
GATE VOLTAGE
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
High Temperature
Reduced VDG
At Full Conduction
--
--
--
--
15
--
5
--
50
50
30
100
pA
nA
pA
pA
1
0.5
--
--
3.5
3.5
V
V
1.5
--
5
1
15
5
mA
%
1500
1000
--
--
1500
0.6
--
--
3
µmho
µmho
%
1
MIN.
60
60
5
TYP.
--
--
15
MAX.
--
--
mV
UNITS
V
V
CONDITIONS
V
DG
= 10V
T
A
= -55°C to +125°C
V
DG
= 10V
CONDITIONS
V
DS
= 0
I
D
= 1nA
I
G
= 1nA
V
DG
= 15V
V
DG
= 15V
I
D
= 0
V
GS
= 0
I
D
= 500µA
I
D
= 500µA
I
D
= 500µA
I
S
= 0
f= 1kHz
V
DG
= 15V
V
GS
= 0
V
DS
= 15V
V
DS
= 15V
V
DG
= 15V
V
DG
= 15V
V
DG
= 3V
V
DG
= 15V
I
D
= 1nA
I
D
= 500µA
I
D
= 500µA
I
D
= 500µA
I
D
= 500µA
V
DS
= 0
T
A
= +125°C
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
