LS846
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
Gate Forward Current
Maximum Voltages
Drain to Source
Gate to Source
Gate to Drain
V
DSO
= 60V
V
GSS
= 60V
V
GDS
= 60V
*For equivalent monolithic dual, see LS843 family.
I
G(F)
= 50mA
350mW
-65 to +150 °C
-55 to +135 °C
1
LOW NOISE, LOW LEAKAGE
SINGLE N-CHANNEL JFET
e
n
= 3nV/√Hz
I
G
= 15pA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(OFF)
V
GS
I
DSS
I
G
I
G
I
GSS
Y
fss
Y
fs
Y
oss
Y
os
NF
e
n
e
n
C
ISS
C
RSS
1.
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
Gate to Source Operating Voltage
Drain to Source Saturation Current
Gate Operating Current
Gate Operating Current Reduced V
DG
Gate to Source Leakage Current
Full Conductance Transconductance
Full Output Conductance
Typical Output Conductance
Noise Figure
Noise Voltage
Noise Voltage
Common Source Input Capacitance
Common Source Reverse Transfer Cap.
MIN
60
1
0.5
1.5
TYP
MAX UNITS
V
3.5
3.5
V
V
mA
pA
pA
pA
µmho
µmho
20
µmho
µmho
dB
nV/√Hz
nV/√Hz
pF
pF
2
0.5
CONDITIONS
V
DS
= 0, I
D
= 1nA
V
DS
= 15V, I
D
= 1nA
V
DS
= 15V, I
D
= 500µA
V
DG
= 15V, V
GS
= 0
V
DG
= 15V, I
D
= 500µA
V
DG
= 3V, I
D
= 500µA
V
DG
= 15V, V
DS
= 0
V
GD
= 15V, V
GS
= 0,
f
= 1kHz
V
DG
= 15V, I
D
= 500µA
V
DG
= 15V, V
GS
= 0
V
DG
= 15V, I
D
= 500µA
V
DS
= 15V, V
GS
= 0, R
G
= 10MΩ,
f
= 100Hz, NBW = 6Hz
V
DS
= 15V, I
D
= 500µA,
f
= 1kHz,
NBW = 1Hz
V
DS
= 15V, I
D
= 500µA,
f
= 10Hz,
NBW = 1Hz
V
DS
= 15V, I
D
= 500µA
5
15
5
15
50
30
100
1500
Typical Conductance Transconductance 1000 1500
0.2
3
7
11
8
3
Absolute maximum ratings are limiting values above which serviceability may be impaired.
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