LT1101
V
S
= 5V, 0V, V
CM
= 0.1V, V
REF(PIN 1)
= 0.1V, Gain = 10 or 100,
– 40°C
≤
T
A
≤
85°C for AI/I grades, unless otherwise noted (Note 4).
SYMBOL PARAMETER
G
E
TCG
E
G
NL
V
OS
∆V
OS
/∆T
l
OS
∆V
OS
/∆T
I
B
∆I
B
/∆T
CMRR
I
S
V
0
Gain Error
Gain Error Drift
Gain Nonlinearity
Input Offset Voltage
LT1101ISW
Input Offset Voltage Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Common Mode
Rejection Ratio
Supply Current
Maximum 0utput
Voltage Swing
Output High, 50k to GND
Output High, 2k to GND
Output Low, V
REF
= 0, No Load
Output Low, V
REF
= 0, 2k to GND
Output Low, V
REF
= 0, I
SINK
= 100µA
3.8
3.0
(Note 2)
G = 100, V
CM
= 0.1V to 3.2V
G = 10, V
CM
= 0.1V to 2.9V, V
REF
= 0.15V
91
80
(Note 2)
(Note 2)
LT1101ISW
0.4
0.16
0.5
7
10
105
98
88
4.1
3.7
4.5
0.7
125
135
3.8
3.0
8
1.5
170
2.0
0.80
4.0
10
25
88
77
CONDITIONS
G = 100, V
0
= 0.1V to 3.5V, R
L
= 50k
G = 10, V
CM
= 0.15, R
L
= 50k
R
L
= 50k (Note 2)
G = 100, R
L
= 50k
G = 10, R
L
= 50k (Note 2)
LT1101AM/AI
MIN
TYP
MAX
0.026
0.011
1
45
4
90
0.080
0.070
4
110
13
350
MIN
LT1101M/I
TYP
0.028
0.014
1
48
5
110
110
0.5
0.5
0.19
0.8
7
10
104
97
92
4.1
3.7
4.5
0.7
125
160
MAX
0.120
0.100
5
140
15
500
950
2.8
4.8
1.30
7.0
12
30
UNITS
%
%
ppm/°C
ppm
ppm
µV
µV
µV/°C
µV/°C
nA
pA/°C
nA
pA/°C
dB
dB
µA
V
V
mV
mV
mV
ELECTRICAL CHARACTERISTICS
8
1.5
170
1101fa
6