LT1101
ELECTRICAL CHARACTERISTICS
0°C
≤
T
A
≤
70°C, unless otherwise noted (Note 4).
SYMBOL PARAMETER
G
E
TCG
E
G
NL
V
OS
∆V
OS
/∆T
l
OS
∆I
OS
/∆T
I
B
∆I
B
/∆T
CMRR
I
S
V
O
Gain Error
Gain Error Drift
Gain Nonlinearity
Input Offset Voltage
LT1101SW
Input Offset Voltage Drift
Input Offset Current
Input Offset Current Drift
Input Bias Current
Input Bias Current Drift
Common Mode
Rejection Ratio
Supply Current
Maximum 0utput
Voltage Swing
Output High, 50k to GND
Output High, 2k to GND
Output Low, V
REF
= 0, No Load
Output Low, V
REF
= 0, 2k to GND
Output Low, V
REF
= 0, I
SINK
= 100µA
4.0
3.3
(Note 2)
G = 100, V
CM
= 0.07V to 3.3V
G = 10, V
CM
= 0.07V to 3V, V
REF
= 0.15V
93
82
(Note 2)
(Note 2)
LT1101SW
0.4
0.14
0.5
6
10
105
99
80
4.2
3.8
4
0.6
100
120
4.0
3.3
7
1.2
150
2.0
0.70
4.0
9
25
90
80
CONDITIONS
G = 100, V
O
= 0.1V to 3.5V, R
L
= 50k
G = 10, V
CM
= 0.15V, R
L
= 50k
R
L
= 50k (Note 2)
G = 100, R
L
= 50k
G = 10, R
L
= 50k (Note 2)
V
S
= 5V, 0V, V
CM
= 0.1V, V
REF(PIN 1)
= 0.1V, Gain = 10 or 100,
LT1101AC
TYP
MAX
0.017
0.010
1
25
4
70
0.065
0.060
4
80
10
250
LT1101C/S
TYP
0.018
0.012
1
25
4
85
300
0.5
1.2
0.17
0.8
6
10
104
98
85
4.2
3.8
4
0.6
100
145
MIN
MIN
MAX
0.095
0.080
5
100
11
350
800
2.8
4.5
1.10
7
11
30
UNITS
%
%
ppm/°C
ppm
ppm
µV
µV
µV/°C
µV/°C
nA
pA/°C
nA
pA/°C
dB
dB
µA
V
V
mV
mV
mV
7
1.2
150
Note 1:
Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2:
This parameter is not tested. It is guaranteed by design and by
inference from other tests.
Note 3:
This parameter is tested on a sample basis only.
Note 4:
These test conditions are equivalent to V
S
= 4.9V, – 0.1V,
V
CM
= 0V, V
REF(PIN1)
= 0V.
Note 5:
Minimum supply voltage is guaranteed by the power supply
rejection test. The LT1101 actually works at 1.8V supply with minimal
degradation in performance.
1101fa
7
LINEAR [ LINEAR INTEGRATED SYSTEMS ]
