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LT1160_1 参数 Datasheet PDF下载

LT1160_1图片预览
型号: LT1160_1
PDF下载: 下载PDF文件 查看货源
内容描述: 半/全桥N沟道功率MOSFET驱动器 [Half-/Full-Bridge N-Channel Power MOSFET Drivers]
分类和应用: 驱动器
文件页数/大小: 16 页 / 229 K
品牌: LINEAR [ LINEAR INTEGRATED SYSTEMS ]
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LT1160/LT1162
TI I G DIAGRA
2V
IN TOP
0.8V
2V
IN BOTTOM
0.8V
t
r
12V
TOP GATE
DRIVER
0V
t
r
12V
BOTTOM
GATE
DRIVER 0V
t
D1
2V
t
f
t
D4
1160/62 TD
10V
OPERATIO
(Refer to Functional Diagram)
The LT1160 (or 1/2 LT1162) incorporates two indepen-
dent driver channels with separate inputs and outputs. The
inputs are TTL/CMOS compatible; they can withstand
input voltages as high as V
+
. The 1.4V input threshold is
regulated and has 300mV of hysteresis. Both channels are
noninverting drivers. The internal logic prevents both
outputs from simultaneously turning on under any input
conditions. When both inputs are high both outputs are
actively held low.
The floating supply for the top driver is provided by a
bootstrap capacitor between the Boost pin and the Top
Source pin. This capacitor is recharged each time the
negative plate goes low in PWM operation.
The undervoltage detection circuit disables both channels
when V
+
is below the undervoltage trip point. A separate
8
W
t
D3
10V
2V
t
D1
t
D3
t
D2
t
f
t
D4
t
D2
U
UW
UV detect block disables the high side channel when
V
BOOST
– V
TSOURCE
is below its own undervoltage trip
point.
The top and bottom gate drivers in the LT1160 each utilize
two gate connections: 1) a gate drive pin, which provides
the turn on and turn off currents through an optional series
gate resistor, and 2) a gate feedback pin which connects
directly to the gate to monitor the gate-to-source voltage.
Whenever there is an input transition to command the
outputs to change states, the LT1160 follows a logical
sequence to turn off one MOSFET and turn on the other.
First, turn-off is initiated, then V
GS
is monitored until it has
decreased below the turn-off threshold, and finally the
other gate is turned on.
11602fb