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LT1162IN 参数 Datasheet PDF下载

LT1162IN图片预览
型号: LT1162IN
PDF下载: 下载PDF文件 查看货源
内容描述: 半/全桥N沟道功率MOSFET驱动器 [Half-/Full-Bridge N-Channel Power MOSFET Drivers]
分类和应用: 驱动器接口集成电路光电二极管
文件页数/大小: 16 页 / 229 K
品牌: LINEAR [ LINEAR INTEGRATED SYSTEMS ]
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LT1160/LT1162
PIN FUNCTIONS
LT1160
SV
+
(Pin 1):
Main Signal Supply. Must be closely decoupled
to the signal ground Pin 5.
IN TOP (Pin 2):
Top Driver Input. Pin 2 is disabled when Pin
3 is high. A 3k input resistor followed by a 5V internal
clamp prevents saturation of the input transistors.
IN BOTTOM (Pin 3):
Bottom Driver Input. Pin 3 is disabled
when Pin 2 is high. A 3k input resistor followed by a 5V
internal clamp prevents saturation of the input transistors.
UV OUT (Pin 4):
Undervoltage Output. Open collector NPN
output which turns on when V
+
drops below the
undervoltage threshold.
SGND (Pin 5):
Small Signal Ground. Must be routed
separately from other grounds to the system ground.
PGND (Pin 6):
Bottom Driver Power Ground. Connects to
source of bottom N-channel MOSFET.
B GATE FB (Pin 8):
Bottom Gate Feedback. Must connect
directly to the bottom power MOSFET gate. The top
MOSFET turn-on is inhibited until Pin 8 has discharged to
below 2.5V.
B GATE DR (Pin 9):
Bottom Gate Drive. The high current
drive point for the bottom MOSFET. When a gate resistor
is used it is inserted between Pin 9 and the gate of the
MOSFET.
PV
+
(Pin 10):
Bottom Driver Supply. Must be connected to
the same supply as Pin 1.
T SOURCE (Pin 11):
Top Driver Return. Connects to the
top MOSFET source and the low side of the bootstrap
capacitor.
T GATE FB (Pin 12):
Top Gate Feedback. Must connect
directly to the top power MOSFET gate. The bottom
MOSFET turn-on is inhibited until V
12
– V
11
has discharged
to below 2.9V.
T GATE DR (Pin 13):
Top Gate Drive. The high current drive
point for the top MOSFET. When a gate resistor is used it
is inserted between Pin 13 and the gate of the MOSFET.
BOOST (Pin 14):
Top Driver Supply. Connects to the high
side of the bootstrap capacitor.
6
U
U
U
LT1162
SV
+
(Pins 1, 7):
Main Signal Supply. Must be closely
decoupled to ground Pins 5 and 11.
IN TOP (Pins 2, 8):
Top Driver Input. The Input Top is
disabled when the Input Bottom is high. A 3k input resistor
followed by a 5V internal clamp prevents saturation of the
input transistors.
IN BOTTOM (Pins 3, 9):
Bottom Driver Input. The Input
Bottom is disabled when the Input Top is high. A 3k input
resistor followed by a 5V internal clamp prevents satura-
tion of the input transistors.
UV OUT (Pins 4, 10):
Undervoltage Output. Open collector
NPN output which turns on when V
+
drops below the
undervoltage threshold.
GND (Pins 5, 11):
Ground Connection.
B GATE FB (Pins 6, 12):
Bottom Gate Feedback. Must
connect directly to the bottom power MOSFET gate. The
top MOSFET turn-on is inhibited until Bottom Gate Feed-
back pins have discharged to below 2.5V.
B GATE DR (Pins 13, 19):
Bottom Gate Drive. The high
current drive point for the bottom MOSFET. When a gate
resistor is used it is inserted between the Bottom Gate
Drive pin and the gate of the MOSFET.
PV
+
(Pins 14, 20):
Bottom Driver Supply. Must be con-
nected to the same supply as Pins 1 and 7.
T SOURCE (Pins 15, 21):
Top Driver Return. Connects to
the top MOSFET source and the low side of the bootstrap
capacitor.
T GATE FB (Pins 16, 22):
Top Gate Feedback. Must
connect directly to the top power MOSFET gate. The
bottom MOSFET turn-on is inhibited until V
TGF
– V
TSOURCE
has discharged to below 2.9V.
T GATE DR (Pins 17, 23):
Top Gate Drive. The high current
drive point for the top MOSFET. When a gate resistor is
used it is inserted between the Top Gate Drive pin and the
gate of the MOSFET.
BOOST (Pins 18, 24):
Top Driver Supply. Connects to the
high side of the bootstrap capacitor.
11602fb