LTC3261
ELECTRICAL CHARACTERISTICS
SYMBOL
Charge Pump
V
IN
V
UVLO
I
VIN
Input Voltage Range
V
IN
Undervoltage Lockout Threshold
V
IN
Quiescent Current
V
IN
Rising
V
IN
Falling
Shutdown, = EN = 0V
MODE = V
IN
, I
VOUT
= 0mA
MODE = 0V, I
VOUT
= 0mA
MODE = 12V
MODE = 0V
RT = GND
MODE = 0V, RT = GND
V
OUT
= GND, RT = GND
l
l
l
l
l
l
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C (Note 2). V
IN
= EN = 12V, MODE = 0V, RT = 200kΩ.
PARAMETER
CONDITIONS
MIN
4.5
3.4
3.8
3.6
2
60
3.5
1.200
–0.94 • V
IN
–V
IN
450
100
0.4
500
32
160
1.1
1.0
0.7
l
l
TYP
MAX
32
4
5
120
5.5
UNITS
V
V
V
μA
μA
mA
V
V
V
V
RT
V
OUT
f
OSC
R
OUT
I
SHORT_CKT
V
MODE(H)
V
MODE(L)
I
MODE
V
EN(H)
V
EN(L)
I
EN
RT Regulation Voltage
V
OUT
Regulation Voltage
Oscillator Frequency
Charge Pump Output Impedance
Max I
VOUT
Short-Circuit Current
MODE Threshold Rising
MODE Threshold Falling
MODE Pin Internal Pull-Down Current
EN Threshold Rising
EN Threshold Falling
EN Pin Internal Pull-Down Current
V
IN
= EN = 32V
V
IN
= MODE = 32V
0.4
550
250
2
KHz
Ω
mA
V
V
μA
1.1
1.0
0.7
2
V
V
μA
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2:
The LTC3261 is tested under pulsed load conditions such that
T
J
≈ T
A
. The LTC3261E is guaranteed to meet specifications from
0°C to 85°C junction temperature. Specifications over the –40°C to
125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3261I is guaranteed over the –40°C to 125°C operating junction
temperature range. High junction temperatures degrade operating
lifetimes; operating lifetime is derated for junction temperatures greater
than 125°C. Note that the maximum ambient temperature consistent with
these specifications is determined by specific operating conditions in
conjunction with board layout, the rated package thermal impedance and
other environmental factors.
The junction temperature (T
J
, in °C) is calculated from the ambient
temperature (T
A
, in °C) and power dissipation (P
D
, in Watts) according to
the formula:
T
J
= T
A
+ (P
D
•
θ
JA
),
where
θ
JA
= 40°C/W is the package thermal impedance.
Note 3:
This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperatures will exceed 150°C when overtemperature protection is
active. Continuous operation above the specified maximum operating
junction temperature may result in device degradation or failure.
3261f
3
LINEAR [ LINEAR INTEGRATED SYSTEMS ]
