PAD SERIES
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (PAD)
Continuous Power Dissipation (J/SSTPAD)
Maximum Currents
Forward Current (PAD)
Forward Current (J/SSTPAD)
50mA
10mA
* Cathode tied to Case
300mW
350mW
-65 to +150 °C
-55 to +135 °C
JPAD
TO-92
BOTTOM VIEW
A
1
3
PICO AMPERE DIODES
BV
R
≥
-30V
C
rss
≤
2.0pF
PAD1,2,5
TO-72
BOTTOM VIEW
2
PAD*
TO-72
BOTTOM VIEW
2
K
K*
C
A
1
SSTPAD
SOT-23
TOP VIEW
K
1
3
K
1
A
2
A
K
2
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
R
V
F
C
rss
CHARACTERISTIC
Reverse Breakdown
Voltage
Forward Voltage
Total Reverse Capacitance
PAD1,5
All Others
ALL PAD
ALL SSTPAD
ALL JPAD
MIN
-45
-30
-35
0.8
0.5
1.5
1.5
0.8
2
pF
V
I
R
= -1µA
I
F
= 5mA
V
R
= -5V,
f
= 1MHz
TYP
MAX UNITS
CONDITIONS
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
(SST/J)PAD1
(SST/J)PAD2
(SST/J)PAD5
I
R
Maximum Reverse
2
Leakage Current
(SST/J)PAD10
(SST/J)PAD20
(SST/J)PAD50
(SST/J)PAD100
(SST/J)PAD200
(SST/J)PAD500
PAD
2
-1
-2
-5
-10
-20
-50
-100
-5
-10
-20
-50
-100
-200
-500
-5
-10
-20
-50
pA
V
R
= -20V
JPAD
2
SSTPAD
2
UNITS
CONDITIONS
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
