U/SST440,441
Linear Integrated Systems
FEATURES
Direct Replacement for SILICONIX U/SST440 & U/SST441
HIGH CMRR
LOW GATE LEAKAGE
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (Total)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
Gate to Gate
-25V
-25V
±50V
50mA
500mW
-65 to +150 °C
-55 to +135 °C
G1
D1
S1
2
1
7
3
5
6
1
MONOLITHIC DUAL
N-CHANNEL JFET
CMRR
≥
85dB
I
GSS
≤
1pA
U SERIES
TO-71
BOTTOM VIEW
S1
1
2
3
4
SST SERIES
SOIC
8
7
6
5
NC
G2
D2
S2
S2
D2
G2
D1
G1
NC
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
U/SST440
TYP
MAX UNITS
10
CONDITIONS
V
GS1
−
V
GS2
∆
V
GS1
−
V
GS2
∆T
I
DSS1
I
DSS2
g
fs1
g
fs2
CMRR
Differential Gate to
Source Cutoff Voltage
U/SST441
20
0.07
0.97
85
20
mV
µV/°C
V
DG
= 10V, I
D
= 5mA
V
DG
= 10V, I
D
= 5mA
T
A
= -55 to +125°C
V
DS
= 10V, V
GS
= 0V
V
DS
= 10V, I
D
= 5mA,
f
= 1kHz
Differential Gate to Source Cutoff
Voltage Change with Temperature
Gate to Source Saturation Current Ratio
Forward Transconductance Ratio
2
Common Mode Rejection Ratio
dB
V
DG
= 5 to 10V, I
D
= 5mA
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX UNITS
CONDITIONS
BV
GSS
V
GS(off)
I
DSS
I
GSS
I
G
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Saturation Current
Gate Leakage Current
Gate Operating Current
3
-25
-1
6
-3.5
15
-1
-1
-6
30
-500
-500
V
V
mA
pA
I
G
= -1µA, V
DS
= 0V
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DG
= 10V, I
D
= 5mA
Linear Integrated Systems
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LINEAR [ LINEAR INTEGRATED SYSTEMS ]
