PRELIMINARY DATA SHEET
D
LND090A/B/C/D
Revolutionary LF-MCTs Replace
MOSFETs, Bipolars & IGBTs In Switching
Apps with only 1.9nC Gate Charge
GENERAL DESCRIPTION
Linear Dimensions introduces the revolutionary Linear Fast
MCT (LF-MCT). A Linear Dimensions proprietary MCT
construction (PATENTS PENDING) allows LF-MCTs for the
first time to be used in fast switching applications where
MOSFETs, bipolars & IGBTs are more commonly used.
LF-MCTs represent the highest current density of any
switching pass element. In the past MCTs have had
switching times in the 800ns+ range and been focused on
high current applications. Linear Dimensions brings LF-
MCTs to high frequency offline AC/DC and DC/DC switching
applications with turn on times of <30ns and turn off times of
<200ns (600V devices).
In AC/DC offline applications such as offline flyback
converters or switching LED drivers, LF-MCTs require 1/3 the
drive current of the MOSFETs typically used. Additionally,
th
LF-MCTs require 1/3 to 1/8 the silicon area of a MOSFET
for a similar voltage drop at rated current saving space and
cost.
Fast LF-MCTs can be used as a replacement for IGBTs
where they have a Vf that is as much as 40% lower than a
typical IGBTs.
Although Fast LF-MCTs must be driven with a +/- gate
voltage, the small current requirement allows the negative
voltage to be generated from the output of a typical switching
gate drive. Additionally, a positive or negative pulse will latch
them on or off and a continuous voltage is not required.
The LND090 are packaged in lead free TO-252 packages or
available as bare die.
FEATURES
600V/1500V anode to cathode voltage
Off leakage 30% of equivalent MOSFET
High impedance MOSFET-like gate
Vg=+/- 5V gate drive, pulsed OK
Turn off current:
1A & 3A LF-MCTs (A,B)
10A & 40A LF-MCTs (C,D)
Low gate capacitance ~ 380pF
Ultra fast rise times ~ 17ns
Sub ~200ns fall times
Silicon area reduced to as little as 30% of the
silicon of a MOSFET with equivalent Vf
Up to 10x the peak current capability of an
equivalent MOSFET
>40% lower forward Vf drop than IGBTs (1.3-1.6V
vs. ~2.2V for IGBT)
High current density >> 300 Amp Peak
Lead free RoHS compliant TO-252 PKG
Also available as bare die
APPLICATIONS
Crowbar protection circuits
High-voltage surge suppressors
Uninterruptible Power Supplies
Capacitor discharge safety switches
White Goods, Rice Cookers
AC/DC Flyback Converters
DC/DC Switching Applications
Resonant switching
Plasma Televisions
Camera Strobe
PASS ELEMENT CURRENT DENSITY
DENSITY
COMPARISON OF 600V DEVICES WITH
LESS T
HAN 1 us TURN-OFF TIME
N-MCT
P-MCT
1000
N-IGBT
100
DARLINGT
ON
10
N-MOSFET
1.0
TEMPERATURE: 25C
CELL SIZE: 35 um
0.5
1.0
1.5
2.0
2.5
FORWARD DROP (VOL S)
T
Y
CURRENT DENSIT (/ A/ cm2)
PACKAGE & SYMBOL
A
A
G
K
G
K
LF-MCT
0
Modelled Forwa rd Drop Compa rison
of MOS Ga ted Power Devices
D-Pak
LINEAR_DIMENSIONS [ LINEAR DIMENSIONS SEMICONDUCTOR ]
