LT3795
Typical perForMance characTerisTics
V
(IVINP-IVINN)
Threshold
vs Temperature
65
64
63
V
(IVINP-IVINN)
(mV)
V
(IVINP-IVINN)
(mV)
62
61
60
59
58
57
56
55
–50 –25
0
25
50
75
100 125 150
3795 G23
T
A
= 25°C, unless otherwise noted.
V
(IVINP-IVINN)
Threshold vs V
IN
65
64
63
62
61
60
59
58
57
56
55
0
20
40
60
V
IN
(V)
3795 G24
V
IVINCOMP
vs V
(IVINP-IVINN)
1.8
1.6
1.4
V
IVINCOMP
(V)
1.2
1.0
0.8
0.6
0.4
0.2
V
IN
= 24V
V
IN
= 24V
80
100
120
0
0
20
40
V
(IVINP-IVINN)
(mV)
60
80
3795 G25
TEMPERATURE (°C)
RAMP Pin Sourcing and Sinking
Current vs Temperature
13
12
CURRENT (µA)
SINKING
SOURCING
TIME (ns)
11
10
160
140
120
NMOS Gate Rise/Fall Time
vs Capacitance
800
700
600
TIME (ns)
RISE TIME
500
400
300
200
100
0
10
20
30
40
50
3795 G27
Top Gate (PMOS) Rise/Fall Time
vs Capacitance
100
80
60
40
20
FALL TIME
FALL TIME
9
RISE TIME
0
1
2
3
4
5
6
7
8
9
10
8
–50 –25
0
25
50
75
100 125 150
3795 G26
0
0
TEMPERATURE (°C)
CAPACITANCE (nF)
CAPACITANCE (nF)
3795 G28
Top Gate Driver Rising Edge
PWM
5V
0V
PWM
5V
0V
Top Gate Driver Falling Edge
TG
85V
75V
TG
85V
75V
100ns/DIV
PMOS VISHAY SILICONIX Si7113DN
3795 G29
100ns/DIV
PMOS VISHAY SILICONIX Si7113DN
3795 G30
8
3795f
For more information
LINEAR_DIMENSIONS [ LINEAR DIMENSIONS SEMICONDUCTOR ]
