LTC1154
High-Side Micropower
MOSFET Driver
FEATURES
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DESCRIPTIO
Fully Enhances N-Channel Power MOSFETs
8µA I
Q
Standby Current
85µA I
Q
ON Current
No External Charge Pump Capacitors
4.5V to 18V Supply Range
Short-Circuit Protection
Thermal Shutdown via PTC Thermistor
Status Output Indicates Shutdown
Available in 8-Pin SOIC
The LTC1154 single high-side gate driver allows using low
cost N-channel FETs for high-side switching applications.
An internal charge pump boosts the gate drive voltage
above the positive rail, fully enhancing an N-channel MOS
switch with no external components. Micropower opera-
tion, with 8µA standby current and 85µA operating cur-
rent, allows use in virtually all systems with maximum
efficiency.
Included on chip is programmable over-current sensing.
A time delay can be added to prevent false triggering on
high in-rush current loads. An active high shutdown input
is also provided and interfaces directly to a standard PTC
thermistor for thermal shutdown. An open-drain output is
provided to report switch status to the
µP.
An active low
enable input is provided to control multiple switches in
banks.
The LTC1154 is available in both 8-pin DIP and 8-pin SOIC
packages.
APPLICATI
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Laptop Computer Power Switching
SCSI Termination Power Switching
Cellular Telephone Power Management
Battery Charging and Management
High-Side Industrial and Automotive Switching
Stepper Motor and DC Motor Control
TYPICAL APPLICATI
Ultra-Low Voltage Drop High-Side Switch
with Short-Circuit Protection
5V
51k
IN
µP
EN
LTC1154
STATUS
GND
G
SD
IRLR024
V
S
200k**
DS
SUPPLY CURRENT (µA)
50
0.036Ω*
0.1µF**
2.7A MAX
45
40
35
30
25
20
15
10
5
5V
LOAD
ALL COMPONENTS SHOWN ARE SURFACE MOUNT.
* IMS026 INTERNATIONAL MANUFACTURING SERVICE, INC. (401) 683-9700
** NOT REQUIRED IF LOAD IS RESISTIVE OR INDUCTIVE.
LTC1154 • TA01
0
0
5
10
15
SUPPLY VOLTAGE (V)
20
LTC1153 • TA02
U
Standby Supply Current
V
IN
= 0V
T
J
= 25°C
UO
UO
1
LINER [ LINEAR TECHNOLOGY ]
