LITE-ON
SEMICONDUCTOR
MURB1610CT thru 1620CT
REVERSE VOLTAGE
- 100
to
200
Volts
FORWARD CURRENT
- 16
Amperes
SUPER FAST
GLASS PASSIVATED RECTIFIERS
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
1
D PAK
K
A
K
2
I
D
B
C
K
2
DIM.
A
B
C
D
E
F
G
H
D
2
PAK
MIN.
9.65
14.60
8.25
1.14
0.51
2.29
2.29
MAX.
10.69
15.88
9.25
1.40
1.14
2.79
2.79
MECHANICAL DATA
2
Case : D PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
PIN 1
PIN 2
F
G
E
J
H
K
HEATSINK
2.03
2.92
1.40
1.14
I
J
0.30
0.64
K
4.37
4.83
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MURB1610CT
100
70
100
16
100
0.975
5
250
85
25
3.0
-55 to +150
MURB1620CT
200
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
140
200
@T
C
=
125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 8.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 1)
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
I
FSM
V
F
I
R
C
J
T
RR
R
0JC
A
V
uA
@T
J
=25 C
@T
J
=150 C
pF
ns
C/W
T
J
,T
STG
C
REV. 2, 01-Dec-2000, KTGB01
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,recovery to 0.25A.
3.Thermal Resistance Junction to Case.
LITEON [ LITE-ON TECHNOLOGY CORPORATION ]
